Consider an intrinsic silicon bar 1 mm by 1 mm in cross section and 2 cm...
Consider an intrinsic silicon bar 1 mm by 1 mm in cross section and 2 cm long. It is found that if an electric field of 15 V/cm is applied on this bar, the current density is 0.5 μA/mm2. Find the intrinsic carrier concentration
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Consider an intrinsic silicon bar 1 mm by 1 mm in cross section
and 2 cm...
Question 2: a) Consider a bar of silicon, by some unspecified process the electrons are injected...
Question 2: a) Consider a bar of silicon, by some unspecified process the electrons are injected in the middle of the bar. The concentration profile is shown below. Write the equation of current flow? Electron Concentration b) I made a diode with following impurities in intrinsic silicon - +5) Phosphorous Boron 1. What kind of device will it make? 2. Draw the schematic. 3. Label the terminals. c) If the voltage is kept constant, the drift velocity of electron is...
please help step by step phym316 mc 139%. question 4 (25 marks) Consider a metal bar with square cross-section that is 10 cm long and 1 cm wide. A potential difference of 250 V is applied across i...
please help step by step
phym316 mc 139%. question 4 (25 marks) Consider a metal bar with square cross-section that is 10 cm long and 1 cm wide. A potential difference of 250 V is applied across its ends. It has a resistivity of 10-8 2m and electron density of 6 x 10sm-3 (a) Calculate the relaxation time, T. (b) Calculate the shift in the Fermi surface due to the applied voltage. [51 15] (d) What is the thermal conductivity...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
2) Calculate the drift current density ( current density due to conductivity) induced in a silicon...
2) Calculate the drift current density ( current density due to conductivity) induced in a silicon semiconductor at T =300 K when the electron concentration is 1016 cm 3 and applied electric field is 30 V/cm.
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K...
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K) the intrinsic carrier concentration is 10/cm3. At this temperature the electron and hole mobilities are the equal, μ.-An-36192 cm 2/Vs. If 100 V is applied across the Ge cube at 77K, what is the current you measure?5 pt a) b) If uah4.9-107-T-166 (cm2V1s1), what is the current at 300K?5 pt
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and =...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
JEE3370 Class To: DLR FROM: Homework #1 SUBJECT: a) A bar-shaped piece of silicon at room...
JEE3370 Class To: DLR FROM: Homework #1 SUBJECT: a) A bar-shaped piece of silicon at room temperature is one inch in length and has a 100 m2 cross-sectional area (i.e. 10x10 um). It is doped with phosphorous to a concentration of 1017/cm3. Find the electrical current through the bar when a voltage of 10 V is applied across the one-inch dimension. b) How long does it take an average electron to drift from one end of the bar to the...
A copper wire has a square cross section 2.68 mm on a side. The wire is...
A copper wire has a square cross section 2.68 mm on a side. The wire is 5.41 m long and carries a current of 3.72 A . The density of free electrons is 8.5×10^28m−3. Part A)Find the magnitude of the current density in the wire. J = 5.18×10^5 A/m2 Part B)Find the magnitude of the electric field in the wire. E = 8.91×10^−3 V/m PartC) How much time is required for an electron to travel the length of the wire?...
Question 2: a) Consider a bar of silicon, by some unspecified process the electrons are injected in the middle of the bar. The concentration profile is shown below. Write the equation of current flow? Electron Concentration b) I made a diode with following impurities in intrinsic silicon - +5) Phosphorous Boron 1. What kind of device will it make? 2. Draw the schematic. 3. Label the terminals. c) If the voltage is kept constant, the drift velocity of electron is...
please help step by step
phym316 mc 139%. question 4 (25 marks) Consider a metal bar with square cross-section that is 10 cm long and 1 cm wide. A potential difference of 250 V is applied across its ends. It has a resistivity of 10-8 2m and electron density of 6 x 10sm-3 (a) Calculate the relaxation time, T. (b) Calculate the shift in the Fermi surface due to the applied voltage. [51 15] (d) What is the thermal conductivity...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
2) Calculate the drift current density ( current density due to conductivity) induced in a silicon semiconductor at T =300 K when the electron concentration is 1016 cm 3 and applied electric field is 30 V/cm.
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K) the intrinsic carrier concentration is 10/cm3. At this temperature the electron and hole mobilities are the equal, μ.-An-36192 cm 2/Vs. If 100 V is applied across the Ge cube at 77K, what is the current you measure?5 pt a) b) If uah4.9-107-T-166 (cm2V1s1), what is the current at 300K?5 pt
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
JEE3370 Class To: DLR FROM: Homework #1 SUBJECT: a) A bar-shaped piece of silicon at room temperature is one inch in length and has a 100 m2 cross-sectional area (i.e. 10x10 um). It is doped with phosphorous to a concentration of 1017/cm3. Find the electrical current through the bar when a voltage of 10 V is applied across the one-inch dimension. b) How long does it take an average electron to drift from one end of the bar to the...
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