1) Solve for the source resistance (Rs)
2) Solve for the drain resistance (Rd)
Homework Answers
Add Answer to:
1) Solve for the source resistance (Rs) 2) Solve for the drain resistance (Rd)
Q3) Design the circuit of that is, determine the values of RD and RS so that...
Q3) Design the circuit of that is, determine the values of RD and RS so that the transistor operates at ID = 0.4 mA and Vp=+0.5 V. The NMOS transistor has V = 0.7 V, H, Cox= 100 A/V2, L = 1 pm, and W = 32 m. Neglect the channel-length modulation effect (i.e., assume that I = 0). Vpp = +2.5 V Z RO V--25 V
Exercise 7.37: Design the bias circuit for the CS amplifier. Assume the MOSFET is specified to...
Exercise 7.37: Design the bias circuit for the CS amplifier. Assume the MOSFET is specified to have Vt 1 V, kn = 4mA/V2 and V4 = 100 V. Neglecting the Early effect, design for ID-0.5mA, VS= 3.5 V, VD6 V and VDD 15 V. Specify the values of RD and Rs If a current of 2 μΑ is used in the voltage divider, specify the values of RG1 and RG2. Give the values of the MOSFET parameters gm and ro...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
Design a common-source MOSFET amplifier such that - Rg is a multiple of 10 - Id...
Design a common-source MOSFET amplifier such that - Rg is a multiple of 10 - Id = 0.52 mA - the amplifier input resistance is in the range of mega ohms - | Avo | = 16.7 V/V - RL = 20k - Vsig has a 2kHz frequency - Rsig = 400k, and is the input and the MOSFET has: Vt = 0.8V k = 5 mA/V^2 VA = 80 V Assume capacitors are shorted in the signal circuit and...
please help with 1&2 Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1...
please help with 1&2
Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1 V.=y=0. Determine the following: (5 pt) 1) Vos and VDS (5 pt) 2) The small-signal parameters, go andro (7.5 pt) 3) Draw small-signal equivalent circuit (7.5 pt) 4) Input Resistance, Rin (7.5 pt) 5) Output Resistance, Rout (15 pt) 6) Small-signal Voltage Gain; A, = Yout +15 V -15 V ima 0 1 ko 50 kn Rout (50 pt) Problem 2. Common-Source Amplifier: Assume...
Please help with the LT SPICE for this nmos transistor analysis problem. I figured out the calcul...
please help with the LT SPICE for this nmos transistor analysis
problem. I figured out the calculations, I just need help verifying
them with LT SPICE. thank you!
Analyze the following MOSFET circuit for dc bias. Solve for ID, VGs and VDs Use RD-5 kQ, Rs-5 kQ, RG,-1 ΜΩ and RG2-1 MS2. Use a power supply with VDD-| 2 V and K.-I mA/V2 and Vin-1 V. RG RD RG2 Rs Verify the analysis of the circuit of Prob. 5 by...
2. (30 points) A voltage source v, with Thevenin resistance Rs = 5k 2 is connected...
2. (30 points) A voltage source v, with Thevenin resistance Rs = 5k 2 is connected to a two-stage amplifier. A trans-conductance stage is connected to the source and have an input resistance Ril = 10k 12, a short-circuit trans-conductance gain Gmi = 50m A/V and an output resistance R1 = 50k 12. The second trans-resistance stage is connected to the first stage and to the load RL = 7k 12, and have an input resistance Ri2 = 25k 12,...
D 6.112 The MOSFET in the circuit of Fig. P6.112 has = 5 mA/V, and V, = 40 V. (a) Find the values of Rs,RD, and RG so that ID=0.4 mA, the largest possible value for R is used while a maximum sig...
D 6.112 The MOSFET in the circuit of Fig. P6.112 has = 5 mA/V, and V, = 40 V. (a) Find the values of Rs,RD, and RG so that ID=0.4 mA, the largest possible value for R is used while a maximum signal swing at the drain of +0.8 V is possible, and the input resistance at the gate is 10 MS2. Neglect the Early effect. (b) Find the values of gm and r, at the bias point. (c) If...
Please show 18-33 clearly i am having a hard time understanding the graphing method. i understand...
please show 18-33 clearly i am having a hard time
understanding the graphing method. i understand shockleys equation
fine
Vertical Sens 1 MA per dn i V per dav 45mA 500 mV Fas-15V per dav I V drv Figure 3.21 Drain charactenstics for a 2N4416 JTET transislor as displayed on a 18. Using the characteristics of Fig. 5.21 21. Using Ipss 9 mA and Vp3 V for the characteristics of Fig. 5.21, calculate Ip at Vos 1 V using Shockley's...
Solve for VGS, Ip, and Vds for this NMOS transistor circuit. Vpp = +6.0V Rp =...
Solve for VGS, Ip, and Vds for this NMOS transistor circuit. Vpp = +6.0V Rp = 4.9 kN2 RG1 = 2 M12 Rs = 2.0 ks2 RG2= 1 M 2 RD kn = 10.0 mA/V2 RG1 Vi= 1.0 V RG2 O Vss = -6.0V
Q3) Design the circuit of that is, determine the values of RD and RS so that the transistor operates at ID = 0.4 mA and Vp=+0.5 V. The NMOS transistor has V = 0.7 V, H, Cox= 100 A/V2, L = 1 pm, and W = 32 m. Neglect the channel-length modulation effect (i.e., assume that I = 0). Vpp = +2.5 V Z RO V--25 V
Exercise 7.37: Design the bias circuit for the CS amplifier. Assume the MOSFET is specified to have Vt 1 V, kn = 4mA/V2 and V4 = 100 V. Neglecting the Early effect, design for ID-0.5mA, VS= 3.5 V, VD6 V and VDD 15 V. Specify the values of RD and Rs If a current of 2 μΑ is used in the voltage divider, specify the values of RG1 and RG2. Give the values of the MOSFET parameters gm and ro...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
please help with 1&2
Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1 V.=y=0. Determine the following: (5 pt) 1) Vos and VDS (5 pt) 2) The small-signal parameters, go andro (7.5 pt) 3) Draw small-signal equivalent circuit (7.5 pt) 4) Input Resistance, Rin (7.5 pt) 5) Output Resistance, Rout (15 pt) 6) Small-signal Voltage Gain; A, = Yout +15 V -15 V ima 0 1 ko 50 kn Rout (50 pt) Problem 2. Common-Source Amplifier: Assume...
please help with the LT SPICE for this nmos transistor analysis
problem. I figured out the calculations, I just need help verifying
them with LT SPICE. thank you!
Analyze the following MOSFET circuit for dc bias. Solve for ID, VGs and VDs Use RD-5 kQ, Rs-5 kQ, RG,-1 ΜΩ and RG2-1 MS2. Use a power supply with VDD-| 2 V and K.-I mA/V2 and Vin-1 V. RG RD RG2 Rs Verify the analysis of the circuit of Prob. 5 by...
2. (30 points) A voltage source v, with Thevenin resistance Rs = 5k 2 is connected to a two-stage amplifier. A trans-conductance stage is connected to the source and have an input resistance Ril = 10k 12, a short-circuit trans-conductance gain Gmi = 50m A/V and an output resistance R1 = 50k 12. The second trans-resistance stage is connected to the first stage and to the load RL = 7k 12, and have an input resistance Ri2 = 25k 12,...
D 6.112 The MOSFET in the circuit of Fig. P6.112 has = 5 mA/V, and V, = 40 V. (a) Find the values of Rs,RD, and RG so that ID=0.4 mA, the largest possible value for R is used while a maximum signal swing at the drain of +0.8 V is possible, and the input resistance at the gate is 10 MS2. Neglect the Early effect. (b) Find the values of gm and r, at the bias point. (c) If...
please show 18-33 clearly i am having a hard time
understanding the graphing method. i understand shockleys equation
fine
Vertical Sens 1 MA per dn i V per dav 45mA 500 mV Fas-15V per dav I V drv Figure 3.21 Drain charactenstics for a 2N4416 JTET transislor as displayed on a 18. Using the characteristics of Fig. 5.21 21. Using Ipss 9 mA and Vp3 V for the characteristics of Fig. 5.21, calculate Ip at Vos 1 V using Shockley's...
Solve for VGS, Ip, and Vds for this NMOS transistor circuit. Vpp = +6.0V Rp = 4.9 kN2 RG1 = 2 M12 Rs = 2.0 ks2 RG2= 1 M 2 RD kn = 10.0 mA/V2 RG1 Vi= 1.0 V RG2 O Vss = -6.0V
Most questions answered within 3 hours.
-
1. In a labor market, marginal cost for a firm is
____________.
a. recruiting cost
b....
asked 5 minutes ago -
On January 1, 2019, ABC Company issued $60,000,000 of 20-year,
10.5% bonds when the market rate...
asked 29 minutes ago -
39.4% of US homes continue to use a landline in addition to cell
phone service. 3...
asked 1 hour ago -
Starting with benzene, synthesize 1-phenyl-1-butyne.
Show intermediates and reagents.
asked 2 hours ago -
Create a 32-run crossed array design with six control factors
and two noise factors such that...
asked 2 hours ago -
A 500g sample of sand from source A has the following amounts
retained on each sieve....
asked 2 hours ago -
In
your own words, please explain the essay by John Keynes wrote "The
End of Laissez...
asked 2 hours ago -
How are the matrix and pixels related? Why are smaller
pixels better for diagnostic quality?
asked 2 hours ago -
2. An AC generator has 80 rectangular loops on
its armature. Each loop is 11 cm...
asked 3 hours ago -
Please help me with this question. Consider Aldi’s current and
potential geographic markets (see Exhibit 4...
asked 3 hours ago -
What are the main components of the fermentation process and
give an explanation of each? Include...
asked 3 hours ago -
Explain which types of cells in the body (belonging to which
organs, etc.) are sensitive to...
asked 3 hours ago