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Please help with the LT SPICE for this nmos transistor analysis problem. I figured out the calcul...
Electronic Circuit Design and Analysis Please show work to make sure I understand the material! T...
Electronic Circuit Design and Analysis
Please show work to make sure I understand the material! Thanks
in advance!
2. Consider the JFET self-bias network shown VDD 10V RD 5002 ID Vos loss 20 mA VGs RG 0.75 ΜΩ Rs 250Ω a) Using a graphical approach, determine VGs and ID. b) Repeat, assuming that Rs has been doubled to 500 S2 but all other aspects of the circuit remain unchanged. Does doubling Rs cause the drain current to decrease to one...
Please answer the following question, please box your answer & write clearly!! 8. Analyze the following...
Please answer the following question, please box your answer
& write clearly!!
8. Analyze the following MOSFET circuit for de bias. Solve for ID, VGs and VDs. Use Rp=5 kQ, Rs=5 k1, RG1 =1 MQ and Rg2=1 MO. Use a power supply with VpD= 12 V and Ky=1 mA/V- and V tn=1 V for the NMOS.
For the n-channel E-MOSFET transistor in the circuit, the parameters are VT N = 0.4 V,...
For the n-channel E-MOSFET transistor in the circuit, the
parameters are VT N = 0.4 V, Kn =
120μA/V2. Determine VGS, ID, and
VDS. Sketch the DC and AC load lines and plot the
Q-point. Assume AC input is connected to the gate and output is
connected to the drain.
+5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier....
Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier. Notice the absence of a source resistor Rsig and load resistor R. If we know how the present amplifier (the one on Figure P3a) behaves without Rsig and RL, we can infer its behaviors if Rsig and R were to be added. design the amplifier circuit on Figure P3a, i.e., you have to find appropriate values for RGj You are to RG,, RD, and...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
I want help with electronic II . Please answer very clear step by step . Thank...
I want help with electronic II . Please answer very
clear step by step .
Thank you
2. In the circuit shown, the N-channel JFET amplifier has VGs =-2v, and loss = 5 mA Determine Ip. Vo. Vos: 9m Ay, A and Rin The circuit parameters are as follows: VOD = 20 V, RD = 5 Kn, RG = 200 Kn, Rs = 1 Kn, and Rtoa.-8KI2. out Vin Ro Rs
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
please help with 1&2 Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1...
please help with 1&2
Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1 V.=y=0. Determine the following: (5 pt) 1) Vos and VDS (5 pt) 2) The small-signal parameters, go andro (7.5 pt) 3) Draw small-signal equivalent circuit (7.5 pt) 4) Input Resistance, Rin (7.5 pt) 5) Output Resistance, Rout (15 pt) 6) Small-signal Voltage Gain; A, = Yout +15 V -15 V ima 0 1 ko 50 kn Rout (50 pt) Problem 2. Common-Source Amplifier: Assume...
Electronic Circuit Design and Analysis
Please show work to make sure I understand the material! Thanks
in advance!
2. Consider the JFET self-bias network shown VDD 10V RD 5002 ID Vos loss 20 mA VGs RG 0.75 ΜΩ Rs 250Ω a) Using a graphical approach, determine VGs and ID. b) Repeat, assuming that Rs has been doubled to 500 S2 but all other aspects of the circuit remain unchanged. Does doubling Rs cause the drain current to decrease to one...
Please answer the following question, please box your answer
& write clearly!!
8. Analyze the following MOSFET circuit for de bias. Solve for ID, VGs and VDs. Use Rp=5 kQ, Rs=5 k1, RG1 =1 MQ and Rg2=1 MO. Use a power supply with VpD= 12 V and Ky=1 mA/V- and V tn=1 V for the NMOS.
For the n-channel E-MOSFET transistor in the circuit, the
parameters are VT N = 0.4 V, Kn =
120μA/V2. Determine VGS, ID, and
VDS. Sketch the DC and AC load lines and plot the
Q-point. Assume AC input is connected to the gate and output is
connected to the drain.
+5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier. Notice the absence of a source resistor Rsig and load resistor R. If we know how the present amplifier (the one on Figure P3a) behaves without Rsig and RL, we can infer its behaviors if Rsig and R were to be added. design the amplifier circuit on Figure P3a, i.e., you have to find appropriate values for RGj You are to RG,, RD, and...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
I want help with electronic II . Please answer very
clear step by step .
Thank you
2. In the circuit shown, the N-channel JFET amplifier has VGs =-2v, and loss = 5 mA Determine Ip. Vo. Vos: 9m Ay, A and Rin The circuit parameters are as follows: VOD = 20 V, RD = 5 Kn, RG = 200 Kn, Rs = 1 Kn, and Rtoa.-8KI2. out Vin Ro Rs
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
please help with 1&2
Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1 V.=y=0. Determine the following: (5 pt) 1) Vos and VDS (5 pt) 2) The small-signal parameters, go andro (7.5 pt) 3) Draw small-signal equivalent circuit (7.5 pt) 4) Input Resistance, Rin (7.5 pt) 5) Output Resistance, Rout (15 pt) 6) Small-signal Voltage Gain; A, = Yout +15 V -15 V ima 0 1 ko 50 kn Rout (50 pt) Problem 2. Common-Source Amplifier: Assume...
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