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I want help with electronic II . Please answer very
clear step by step .
Thank...
Electronic Circuit Design and Analysis Please show work to make sure I understand the material! T...
Electronic Circuit Design and Analysis
Please show work to make sure I understand the material! Thanks
in advance!
2. Consider the JFET self-bias network shown VDD 10V RD 5002 ID Vos loss 20 mA VGs RG 0.75 ΜΩ Rs 250Ω a) Using a graphical approach, determine VGs and ID. b) Repeat, assuming that Rs has been doubled to 500 S2 but all other aspects of the circuit remain unchanged. Does doubling Rs cause the drain current to decrease to one...
analog electronic question.. please answer all by showing step by step calculation clearly. tq Note: Question...
analog electronic question.. please answer all by
showing step by step calculation clearly. tq
Note: Question 1 is to be done outside the lab hours] A JFET common gate amplifier circuit is shown in Figure la. The supply voltage is 15V. The JFET has the following parameters which are: lss 40mA and Vp2V. The JFET is biased at VGs IV The resistors have the following values: Rs = 100Q, R. = 1 k? and RD-R,-7.5k(2. +15V out Output Cin Ri...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
Please carry out prelab design questions Section Discrete Devices LAB 11 JFET BIAS DESIGN Objective: The...
Please carry out prelab design questions
Section Discrete Devices LAB 11 JFET BIAS DESIGN Objective: The objective of this laboratory is to design a JFET amplifier for specific DC operating point, employing self-bias and voltage-divider bias configurations, and verify the accuracy of the design. Prelab: Carry out the following on a separate sheet of paper. Show your work and box answers. 1. Design the self-bias circuit of Figure 11(a) for a centered operating point at /p=4 mA and Vos =...
Please help with the LT SPICE for this nmos transistor analysis problem. I figured out the calcul...
please help with the LT SPICE for this nmos transistor analysis
problem. I figured out the calculations, I just need help verifying
them with LT SPICE. thank you!
Analyze the following MOSFET circuit for dc bias. Solve for ID, VGs and VDs Use RD-5 kQ, Rs-5 kQ, RG,-1 ΜΩ and RG2-1 MS2. Use a power supply with VDD-| 2 V and K.-I mA/V2 and Vin-1 V. RG RD RG2 Rs Verify the analysis of the circuit of Prob. 5 by...
please solve with a clear line 1) Explain the operation of E-MOSFET as a switch [3...
please solve with a clear line
1) Explain the operation of E-MOSFET as a switch [3 marks] 2) Using the same transistor, design a circuit to switch ON an LED for two seconds and switch OFF for one second b) In your project you need to design a JFET CS amplifier with medium voltage gain Design a self-biased JFET amplifier. Assume Vpp = +15V, Ro=1kg. [4 marks] The Q-point is set to be Ip=3mA Given: loss = 10 mA, Vp...
please help with 1&2 Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1...
please help with 1&2
Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1 V.=y=0. Determine the following: (5 pt) 1) Vos and VDS (5 pt) 2) The small-signal parameters, go andro (7.5 pt) 3) Draw small-signal equivalent circuit (7.5 pt) 4) Input Resistance, Rin (7.5 pt) 5) Output Resistance, Rout (15 pt) 6) Small-signal Voltage Gain; A, = Yout +15 V -15 V ima 0 1 ko 50 kn Rout (50 pt) Problem 2. Common-Source Amplifier: Assume...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH =1 V Rp R, C. K 1 mA/V2 2 0.1 R Given: Vcc 2 mA, 10 V, lbias Ct C2 0, 5 k2, RD 2 k2 RI 10 k, R2 R (12 points) a) Determine the small signal gain, vo/Vin. (4 points) b) Determine the input resistance, Rin. (4 points) c) Determine the output resistance, Ro. Useful formulae: for n-channel MOSFET triode region =...
Explain step by step, please. I want to learn how to do it. ll. (33 pts)...
Explain step by step, please. I want to learn how to do
it.
ll. (33 pts) In the the voltage gains Vod/N, and VeV e amplifier shown below, jo] show that the drain current lo 250 uA (b)Determine 20V Parameters: K" (K, W/L)/2+ 15.63 ㎂v. @dV, G 00 Rd 20k R1 1Meg C1 10uF Vos VL R2 1Meg Rs 20k
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristic...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristics in figure 1b, not the equations in your textbook, to answer the following A) From figure lb estimate gm and ro for the FET in the saturation region. Include calculations or an explanation with your answer B Find the values for Re Rd. VDD and VGG so that zin- 100k, zout 5k, L 2 mA and Vds-5 C) Find the GAIN-vo/vi 2oUT Rg...
Electronic Circuit Design and Analysis
Please show work to make sure I understand the material! Thanks
in advance!
2. Consider the JFET self-bias network shown VDD 10V RD 5002 ID Vos loss 20 mA VGs RG 0.75 ΜΩ Rs 250Ω a) Using a graphical approach, determine VGs and ID. b) Repeat, assuming that Rs has been doubled to 500 S2 but all other aspects of the circuit remain unchanged. Does doubling Rs cause the drain current to decrease to one...
analog electronic question.. please answer all by
showing step by step calculation clearly. tq
Note: Question 1 is to be done outside the lab hours] A JFET common gate amplifier circuit is shown in Figure la. The supply voltage is 15V. The JFET has the following parameters which are: lss 40mA and Vp2V. The JFET is biased at VGs IV The resistors have the following values: Rs = 100Q, R. = 1 k? and RD-R,-7.5k(2. +15V out Output Cin Ri...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
Please carry out prelab design questions
Section Discrete Devices LAB 11 JFET BIAS DESIGN Objective: The objective of this laboratory is to design a JFET amplifier for specific DC operating point, employing self-bias and voltage-divider bias configurations, and verify the accuracy of the design. Prelab: Carry out the following on a separate sheet of paper. Show your work and box answers. 1. Design the self-bias circuit of Figure 11(a) for a centered operating point at /p=4 mA and Vos =...
please help with the LT SPICE for this nmos transistor analysis
problem. I figured out the calculations, I just need help verifying
them with LT SPICE. thank you!
Analyze the following MOSFET circuit for dc bias. Solve for ID, VGs and VDs Use RD-5 kQ, Rs-5 kQ, RG,-1 ΜΩ and RG2-1 MS2. Use a power supply with VDD-| 2 V and K.-I mA/V2 and Vin-1 V. RG RD RG2 Rs Verify the analysis of the circuit of Prob. 5 by...
please solve with a clear line
1) Explain the operation of E-MOSFET as a switch [3 marks] 2) Using the same transistor, design a circuit to switch ON an LED for two seconds and switch OFF for one second b) In your project you need to design a JFET CS amplifier with medium voltage gain Design a self-biased JFET amplifier. Assume Vpp = +15V, Ro=1kg. [4 marks] The Q-point is set to be Ip=3mA Given: loss = 10 mA, Vp...
please help with 1&2
Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1 V.=y=0. Determine the following: (5 pt) 1) Vos and VDS (5 pt) 2) The small-signal parameters, go andro (7.5 pt) 3) Draw small-signal equivalent circuit (7.5 pt) 4) Input Resistance, Rin (7.5 pt) 5) Output Resistance, Rout (15 pt) 6) Small-signal Voltage Gain; A, = Yout +15 V -15 V ima 0 1 ko 50 kn Rout (50 pt) Problem 2. Common-Source Amplifier: Assume...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH =1 V Rp R, C. K 1 mA/V2 2 0.1 R Given: Vcc 2 mA, 10 V, lbias Ct C2 0, 5 k2, RD 2 k2 RI 10 k, R2 R (12 points) a) Determine the small signal gain, vo/Vin. (4 points) b) Determine the input resistance, Rin. (4 points) c) Determine the output resistance, Ro. Useful formulae: for n-channel MOSFET triode region =...
Explain step by step, please. I want to learn how to do
it.
ll. (33 pts) In the the voltage gains Vod/N, and VeV e amplifier shown below, jo] show that the drain current lo 250 uA (b)Determine 20V Parameters: K" (K, W/L)/2+ 15.63 ㎂v. @dV, G 00 Rd 20k R1 1Meg C1 10uF Vos VL R2 1Meg Rs 20k
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristics in figure 1b, not the equations in your textbook, to answer the following A) From figure lb estimate gm and ro for the FET in the saturation region. Include calculations or an explanation with your answer B Find the values for Re Rd. VDD and VGG so that zin- 100k, zout 5k, L 2 mA and Vds-5 C) Find the GAIN-vo/vi 2oUT Rg...
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