Please use Multisim with probes placed and labeled. Thank you for your time!
VCC 24V RC 6.8kQ 100kΩ C2 0 15UF 01 C1 15uF 2N3904 R2 RE CE Figure 1. Common-emitter transistor a...
Consider the BJT common-emitter amplifier in Figure 1. Assume that the 2N3904G transistor has the following parameters: β-206, VBE-0.TV and the Early voltage VAT 1000V. vCC RB1a I multiple resistors RC want n Vload 22HF Rload 01 2N3904G V1 6302 4.7HF RE2CE 0.01Vpk 1kHz maliple esistons lue you available in the ki Figure 1 BJT CE amplifier 0.5 V and VC-3 V (a) Design the DC biasing circuit so that lc-2 mA, VCE = 2.5 V, VE Consider the BJT...
15 Vcc RC 5k C2 R1 4.7k Vout 4H C1 Q1 2210 RL in 2k 50 71? RE 2.2k CE R2 2.5k SINEO AC 0.02 15? ·model 2210 NPN (Bf=100) Figure 1 A simple common emitter amplifier circuit. Note the ac source has a magnitude of 20 mV. NOTE: Only the 'full' schematics are requested below, not the ac small signal models. You may use the equations derived in lecture (or from the text); there is no requirement to rederive...
Please answer 2,3 and 4 VCC Rb Rs C1 Wwth VS Re Ce RL VO w + Figure 1 For the circuit of Figure 1 the following parameters are given with Vec = 15 volts DC: Rs = 0 ohm ra = 1000 ohm Rb = 1750 ohms CI = 10 microfarads gm = 30ms RL = 50 ohms Ce=0.3 microfarads Re = 145 ohms C2 may be considered very large vs is a sinusoidal voltage source of 1 volt...
1.0 kn. RE-390 Ω, r-15 Ω. and ßac-75. 5. For a common-emitter amplifier, Rc Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is (a) 66.7 (d) 75 (b) 2.56 (c) 2.47 6. In the circuit of Question 5, if the frequency is reduced to the point where Xctbypass) RE, the voltage gain (a) remains the same (b) is less (c) is greater 7. In a common-emitter amplifier with voltage-divider bias, Rimlbase) 68 k2, Ri 33...
Voc Ri Rc C2 + RS G Q2N3904 RL Vout 2 R2 RE CE Rin Rout Cu B 1x B C o + V be : Cr 8m'be E VCC R R2 Rc RE RS RL С. Cz CE 12 V 8.2 kg 3.9 ko 6.3 k2 3.3 kΩ 3 ko 3.9 ko 10 uF 1uF 100 u Assume the 2N3904 has a 8 =100, Veron} = 0.7V, VA= 100V, C=100, C=13.9pF and Ce=8pF. Use the emission coefficient as n...
Could someone please help me on how I should be configuring the circuit in Figure 4(a) in Multisim? Basically not understanding question #1 in the Procedure. Cannot keep Vrb the same value while adjusting Vcc. Then when trying to adjust Vbb to hold Vrb, Ib changes. Any help is appreciated! Discrete Devices Section LAB 4 BJT CHARACTERISTICS AND BIASING Objective: The objective of this laboratory is to examine the operation of a bipolar junction transistor and plot its output characteristics...
The 1 mA. V, ls -VE -15 15 V, in the following differential amplifier circuit, Vcc parameters are given as β, 100, VBE# 0.7 V, pr-25 mV, K.-100 V. transistor Rc-10 kΩ For: RE-150 Ω Rc Rc REE-200 kΩ a) What is the input differential resistance, Rid b) What is the overall voltage gain vV? You c) What is input common mode resistance, d) What is the worst case common mode gain that appear across the two input terminals? (4...
Experiment 2: Good biasing Set up the circuit with R2 12 k2, R RE 1 k, and Vcc 15 V 39 k2, Rc = 2 k?. Circuit Analysis: Compute Ic, I, and VCE PSpice Simulation: a) Simulate the circuit with PSpice (bias point details only) and compare values of Ic, IB, VCE, and VBE from PSpice simulations with your analytical calculations. b) Rerun your PSpice simulations for temperatures of 0 and 60°C. Make a table of Ic IB, VCE, and...
Vcc= 15 V Rc 2 kO R1 10 kO Vo C1 R2=5 kQ Vs RE= 2 kQ Figure 1.1 [Rajah 1.1) SECTION A Bakagian A Question 1 Soalan 1 State THREE (3) operating regions in Bipolar Junction Transistor (BJT) and (a) briefly explain. [Nyatakan TIGA (3) kawasan operasi untuk transistor simpang dwikutub (BJT) dan jelaskan.] (3 Marks/Markah) (b) Based on the Figure 1.1, given B 100 and VBE (ON) 0.7 V. [Berdasarkan Rajah 1.1, diberi B 100 dan Vas (ON...
Vcc= 15 V Rc 2 kO R1 10 kO Vo C1 R2=5 kQ Vs RE= 2 kQ Figure 1.1 [Rajah 1.1) SECTION A Bakagian A Question 1 Soalan 1 State THREE (3) operating regions in Bipolar Junction Transistor (BJT) and (a) briefly explain. [Nyatakan TIGA (3) kawasan operasi untuk transistor simpang dwikutub (BJT) dan jelaskan.] (3 Marks/Markah) (b) Based on the Figure 1.1, given B 100 and VBE (ON) 0.7 V. [Berdasarkan Rajah 1.1, diberi B 100 dan Vas (ON...