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1018 cm 16-5 3 and We form a p-n junction in GaP (E, 2.25 eV) using NA 101 cm. The dielectric constant is 9, and the ef...
For the material described in the previous problem, calculate the wavelength at which a transition from opaci...
For the material described in the previous problem, calculate the wavelength at which a transition from opacity to transparency will occur, and the wave- length at which the reverse transition will occur. Sketch the reflectivity vs. wavelength, with these two wavelengths indicated. 16-6. -3 and 1018 16-5. We form a p-n junction in GaP (E Np 1016 cm3. The dielectric constant is 9, and the effective masses of electrons and holes are 0.35 and 0.5 timeş the free electron mass,...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concent...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a)...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
**Please Show All The Steps** As I mentioned in the class assume that we have a...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
For the material described in the previous problem, calculate the wavelength at which a transition from opacity to transparency will occur, and the wave- length at which the reverse transition will occur. Sketch the reflectivity vs. wavelength, with these two wavelengths indicated. 16-6. -3 and 1018 16-5. We form a p-n junction in GaP (E Np 1016 cm3. The dielectric constant is 9, and the effective masses of electrons and holes are 0.35 and 0.5 timeş the free electron mass,...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
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