Binding energy of donors and acceptors (a) Calculate the approximate donor and acceptor binding energies in...
Binding energy of donors and acceptors
(a) Calculate the approximate donor and acceptor binding energies
in GaAs.
(b) Calculate the approximate donor and acceptor binding energies
in Si.
(c) Calculate the approximate donor and acceptor binding energies
in Ge.
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Binding energy of donors and acceptors
(a) Calculate the approximate donor and acceptor binding energies
in...
Calculate the approximate donor binding energy for Ge (
Calculate the approximate donor binding energy for Ge (
Using SEMF calculate the total binding energy B and the value of B/A for, , and...
Using SEMF calculate the total binding energy B and the value of
B/A for,
,
and
. b) Based on your result is
stable against alpha radioactivity? c) More precise values of
binding energies for
and He/alpha particle are 56.5 MeV and 28.29 MeV, respectively.
Write down the reaction of the
alpha decay and calculate the energy released in it.
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concent...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
An IC circuit requires that we design a 50 n-type resistor in a p- type Si wafer. the acceptir do...
an IC circuit requires that we design a 50 n-type
resistor in a p- type Si wafer. the acceptir doping is 1014/cm3,
the donor implant depth is 5 micro met, the lenght of the registor
is 20 micromet, and the maximum width allowed is 15 micromet.
caculate the required donor density. assume that 1000cm2/Vs
300cm2/Vs
Note c 3x10m/s, h-6.63x10 J-s, mo-9.11x10 kg, q-1.6x 10-19 C, nis-1.5x10/cm3. Eo-8.85x10-12 F/m, Erst 11.8, k-1.38x1023 J/K, Ers1o2-3.9, T-300K, 1 eV-1.6x10-19 J I. An IC...
e Calculate the position of EF with respect to E. 5. Explain why holes are found...
e Calculate the position of EF with respect to E. 5. Explain why holes are found wny holes are found near the top of the valence band, whereas conduction electrons are found at the bottom of the conduction band. O. Using the Figure 3-17 in your text (also attached), fill in the following table: Semiconductor 300°K 400°K 500°K Ge GaAs For Ge at 500°K and Si at 400°K, show on the attached graph how you determined the value you put...
2. BigMoney Inc. has also had a major spill of inorganic Fe that contaminated the soil...
2. BigMoney Inc. has also had a major spill of inorganic Fe that contaminated the soil around their plant. Scientists at BigMoney have developed mechanisms for removing Fe from soil, but have not found one for Fe. They want to know, on a strictly theoretical basis (regardless of whether bacteria exist im nature that actually.do these specific reactions) f there are any types of bacteria a. Is this an oxidation or reduction? (0.5 point) b. Is Fe acting as an...
28. A Lewis Acid is an electron A) donor B) acceptor C) eliminator D) coupler 29....
28. A Lewis Acid is an electron A) donor B) acceptor C) eliminator D) coupler 29. A process has a AH of 8.5 kJ/mol and a AS of 35.2 J/mol-K. What is AG at 300 K for this process? A) -23.0 kJ/mol B) -2.06 kJ/mol C) +33.4 kJ/mol D) +1.24 kJ/mol 30. A spontaneous voltaic cell is based on the following two standard half-reactions: ()+ 2e → CdEred (Ca/Cd)--0.40 V + 2e → Sn Ered (Sn™/Sn) - -0.14 V What...
The exact ground state energy of He is -79.0 eV. Using the variational method, you calculate an a...
The exact ground state energy of He is -79.0 eV. Using the variational method, you calculate an approximate energy to be -83.0 eV. You must have made an error because the variational method energies must A. Equal the exact ground state energy B. Be positive C. (Equal or) lie above the ground state D. (Equal or) lie below the ground state
Thermodynamics 5. A system has three energy eigenstates (microstates), with energies 0, E1, and E2 »...
Thermodynamics
5. A system has three energy eigenstates (microstates), with energies 0, E1, and E2 » Ei. It is sitting in a heat bath (reservoir) with temperature T. a. Find the partition function Z(T). b. Find simple approximate expressions for Z when t > E2, E2 »T» Ei, and T < E1. For the high- and medium-temperature regimes, your expressions should be zeroth-order, i.e., should not contain t, but for the low-temperature regime you should include the leading T-dependence. c....
6. (20 marks) a) Use values of bond dissociate energy (D) to calculate the approximate enthalpy...
6. (20 marks) a) Use values of bond dissociate energy (D) to calculate the approximate enthalpy change for the combustion of 1 mol C2H4 in excess molecular oxygen to form gaseous water and CO2 gas. b) Use values of standard enthalpy of formation (AHºr) to calculate the standard enthalpy change of the combustion reaction. Compare the two values obtained from (a) and (b). c) According to your understanding about average bond dissociate energy and standard enthalpy of formation, which method...
Using SEMF calculate the total binding energy B and the value of
B/A for,
,
and
. b) Based on your result is
stable against alpha radioactivity? c) More precise values of
binding energies for
and He/alpha particle are 56.5 MeV and 28.29 MeV, respectively.
Write down the reaction of the
alpha decay and calculate the energy released in it.
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
an IC circuit requires that we design a 50 n-type
resistor in a p- type Si wafer. the acceptir doping is 1014/cm3,
the donor implant depth is 5 micro met, the lenght of the registor
is 20 micromet, and the maximum width allowed is 15 micromet.
caculate the required donor density. assume that 1000cm2/Vs
300cm2/Vs
Note c 3x10m/s, h-6.63x10 J-s, mo-9.11x10 kg, q-1.6x 10-19 C, nis-1.5x10/cm3. Eo-8.85x10-12 F/m, Erst 11.8, k-1.38x1023 J/K, Ers1o2-3.9, T-300K, 1 eV-1.6x10-19 J I. An IC...
e Calculate the position of EF with respect to E. 5. Explain why holes are found wny holes are found near the top of the valence band, whereas conduction electrons are found at the bottom of the conduction band. O. Using the Figure 3-17 in your text (also attached), fill in the following table: Semiconductor 300°K 400°K 500°K Ge GaAs For Ge at 500°K and Si at 400°K, show on the attached graph how you determined the value you put...
2. BigMoney Inc. has also had a major spill of inorganic Fe that contaminated the soil around their plant. Scientists at BigMoney have developed mechanisms for removing Fe from soil, but have not found one for Fe. They want to know, on a strictly theoretical basis (regardless of whether bacteria exist im nature that actually.do these specific reactions) f there are any types of bacteria a. Is this an oxidation or reduction? (0.5 point) b. Is Fe acting as an...
28. A Lewis Acid is an electron A) donor B) acceptor C) eliminator D) coupler 29. A process has a AH of 8.5 kJ/mol and a AS of 35.2 J/mol-K. What is AG at 300 K for this process? A) -23.0 kJ/mol B) -2.06 kJ/mol C) +33.4 kJ/mol D) +1.24 kJ/mol 30. A spontaneous voltaic cell is based on the following two standard half-reactions: ()+ 2e → CdEred (Ca/Cd)--0.40 V + 2e → Sn Ered (Sn™/Sn) - -0.14 V What...
Thermodynamics
5. A system has three energy eigenstates (microstates), with energies 0, E1, and E2 » Ei. It is sitting in a heat bath (reservoir) with temperature T. a. Find the partition function Z(T). b. Find simple approximate expressions for Z when t > E2, E2 »T» Ei, and T < E1. For the high- and medium-temperature regimes, your expressions should be zeroth-order, i.e., should not contain t, but for the low-temperature regime you should include the leading T-dependence. c....
6. (20 marks) a) Use values of bond dissociate energy (D) to calculate the approximate enthalpy change for the combustion of 1 mol C2H4 in excess molecular oxygen to form gaseous water and CO2 gas. b) Use values of standard enthalpy of formation (AHºr) to calculate the standard enthalpy change of the combustion reaction. Compare the two values obtained from (a) and (b). c) According to your understanding about average bond dissociate energy and standard enthalpy of formation, which method...
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