(a) Compare equation (10-11) evaluated at room temperature for a silicon band gap of 1.1 eV and for a typical donor-state/conduction band gap of 0.05 eV. (b) Assuming only one impurity atom for every i05 silicon atoms, do your results suggest that majority carriers, bumped up from donor levels, should outnumber minority carriers created by thermal excitation across the whole 1.1 eV gap? (The calculation ignores the difference in density of states between donor levels and bands, which actually strengthens the argument.)
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