L.38 Diode in series with 1.OMs2 resister ccross 2.8 v Fin 2 Reerse bresed
2. A diode can be used as a white noise generator. Calculate the magnitude of shot noise if 100 V is applied to a diode in series with a 10 Ω resistor when measured with an instrument that has a 100 kHz bandwidth. a. If the shot noise signal above is taken across the resistor and amplified by 105 calculate the shot noise at the amplifier output b. 2. A diode can be used as a white noise generator. Calculate...
Question 1: An ideal diode turns on for positive anode-cathode voltages. But the characteristic of diode does not appear to show any ID values when voltage across the diode is greater than zero (VD > 0). How do you explain this plot? ---Reverse bias Forward bias --- Question 2: Plot (I-V) characteristic if we place a 10 12 resistor in series with the diode? Question 3: Plot (I-V) characteristic if we place a lV voltage source in series with the...
1. At a forward voltage of 2 V, the current density in a symmetric p-n diode is 10A/cm2. Estimate concentration of doping in this diode. 1. At a forward voltage of 2 V, the current density in a symmetric p-n diode is 10A/cm2. Estimate concentration of doping in this diode.
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
(1) Find power dissipated in diode. Diode threshold voltage 2.5 V A = 1002
(25pts) 2. Design a four resister BJT (CE) bias circuit (using method 1 or 2) for the following specifications: loq=1.5 mA, VCEQ=5 V, Vcc=14 V. Find all resistor values. Assume a BJT transistor (npn) with B=180 and V Be=0.7V Draw the designed circuit with all values.
QUESTION 1 l (mA) 3.0 Diode I-V 25 PS 1.5 1.0 0.5 5 Yo (volt) Using the given load line and the diode curve, find the Ip quiescent value approximately in mA's. Choose one of the choices given closest to what you found. Hint: You can find the answer approximately just looking at the two graphs (we call this the graphical method) O approximately 1.5 mA O approximately 1.7 mA O approximately 1 mA approximately 2 mA
A 8.2-V battery is connected in series with a 38-mH inductor, a 150-Ω resistor, and an open switch.A 8.2-V battery is connected in series with a 38-mH inductor, a 150-Ω resistor, and an open switch. Part A What is the current in the circuit 0.110 ms after the switch is closed? unit (mA) Part B How much energy is stored in the inductor at this time? unit(micro J)
Final Test ENS345, Spring 2015 1. At a forward voltage of 2 V, the current density in a symmetric p-n diode is 10A/cm'.Estimate concentration of doping in this diode Final Test ENS345, Spring 2015 1. At a forward voltage of 2 V, the current density in a symmetric p-n diode is 10A/cm'.Estimate concentration of doping in this diode
lied to a diode in series with a 10 Ω resistor when measured with an 3. Consider 100 V app instrument with a 100 kHz bandwidth Calculate the magnitude of the thermal noise at 25 °C. a. For the sake of comparison, calculate the thermal noise for the conditions specified above when the frequency bandwidth is 1 kHz. b. lied to a diode in series with a 10 Ω resistor when measured with an 3. Consider 100 V app instrument...