Please can you explain details about BJT following steps:
- Physical structure of BJT (both npn or pnp)
- Operation of BJT in cut-off, in active mode and in saturation mode
- In active mode, what could be done to reduce base current
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Emitter Base Collector 5. Figure illustrates the minority carrier concentrations along a BJT. We are told that VEB>0 and VcB>0 according to polarity shown in the figure. State the type of the transistor and the mode in which it is operating a. PNP, active mode b. NPN, saturation mode c. NPN, reverse active mode d. PNP, cut-off mode +V
Emitter Collector PIN 5. Figure illustrates the minority carrier concentrations along a BJT. We are told that V=> and VBO according to polarity shown in the figure. State the type of the transistor and the mode in which it is operating a. PNP, active mode b. NPN, saturation mode c. NPN, reverse active mode d. PNP, cut-off mode
Emitter Collector DIN 5. Figure illustrates the minority carrier concentrations along a BJT. We are told that VÆ> and VBO according to polarity shown in the figure. State the type of the transistor and the mode in which it is operating a. PNP, active mode b. NPN, saturation mode c. NPN, reverse active mode d. PNP, cut-off mode
Problem 1: BJT DC Circuits Analyze the four circuits below, first analytically and then verify using simulations in PSPICE/Multisim. You have to solve each circuit that is, find the status of the BUT (active, saturation or cutoff mode) and then find all the node voltages and all the currents. Whenever you solve manually always make the following assumptions: for npn BIT VE-0.7V (if the BE junction is forward biased) for pap BIT VEB-0.7V (if the BE junction is forward biased)...
The problem may appear similar to others on the site, but this different problem with a different answer. Please don't copy and paste a previous solution. Problem 1: BJT DC Circuits Analyze the three circuits below, first analytically and then verify using PSPICE. You have to solve each circuit - that is, find the status of the BJT (active, saturation or cutoff mode) and then find all the node voltages and all the currents. Whenever you solve manually always make...
(20 pts) The BJT in the circuit below has the following specifications: • in active mode ß = 50, VBE = 0.76 V, and • in saturation VCEsat = 0.2 V. Find VE, VB and Vc and determine the mode of operation (active, saturation, cut-off). Given values are: /= 1 mA, Rg=200 kN and Re =4 k12. I Vc RB VB. VEم RE
answer i-iv please The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Physical structure of MOSFET (both NMOS and PMOS) Operation of MOSFET in cut-off, in triode and in saturation mode MOSFET as an amplifier Please explain them.Thanks.
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward active bias is given in the following questions. On top of the figure, sketch the corresponding new minority carrier concentration when the given condition is changed. (To make the question simple, you may assume the depletion width remains unchanged in all questions. But you have to indicate the new equilibrium minority concentration if they are affected.) 6. a) collector doping is increased by...
A npn BJT has a B = 110 and a base current of iB = 50 μA. Calculate the collector current and the emitter current. Assume operation in the active region. Express the results in mA. (4 pts.)