The bandgap of a GaAs laser is 1.0 eV and the effective mass of the valence...
The bandgap of a GaAs laser is 1.0 eV and the effective mass of the valence band is half of the effective mass of the conduction band. Assuming that the recombination transition is at 0.03 above the band gap calculate the transition wavelength.
Homework Answers
Add Answer to:
The bandgap of a GaAs laser is 1.0 eV and the effective mass of
the valence...
The bandgap of a GaAs laser is 1.0 eV and the effective mass of the valence band is half of the e...
The bandgap of a GaAs laser is 1.0 eV and the effective mass of the valence band is half of the effective mass of the conduction band. Assuming that the recombination transition is at 0.03 above the band gap calculate the transition wavelength.
GaAs laser (a) The degenerate occupation of the conduction and valence bands with electrons and holes...
GaAs laser (a) The degenerate occupation of the conduction and valence bands with electrons and holes helps to maintain the laser requirement that emission must overcome absorption. Explain how the degeneracy prevents band-to-band absorption at the emission wavelength of 867 nm (b) Assuming equal electron and hole concentrations, and same effective masses for electrons and holes, calculate the minimum carrier concentration n -p for population inversion in GaAs at 300 K. The intrinsic carrier concentration at 300 K in GaAs...
(0) If in GaAs, the Fermi level is 0.30 eV below the conduction band. [10] calculate the thermal equilibrium electron and hole concentration at room temperature. Bandgap of CaAs is 1.42 eV, the effective density of states of the conduction band at 300K i
(0)If in GaAs, the Fermi level is 0.30 eV below the conduction band. [10] calculate the thermal equilibrium electron and hole concentration at room temperature. Bandgap of CaAs is 1.42 eV, the effective density of states of the conduction band at 300K is 4.7x10 cm and the effective density of states of the valence band is 7x10¹ cm³.L213(11)Identify and illustrate with required equations and diagrams, how energy and momentum are conserved in band to band transitions in indirect band gap...
Consider the semiconductor CuInSe2. Its bandgap is 1.0 eV, and the effective masses of electrons and...
Consider the semiconductor CuInSe2. Its bandgap is 1.0 eV, and the effective masses of electrons and holes are .09 me and .72 me, respectively. If the material is doped such that the Fermi energy is .1 eV above the valence band edge, determine: (a) the number of electrons in the conduction band per cubic centimeter and (b) the number of holes in the valence band per cubic centimeter.
Please explain part b in details thx! Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019...
Please explain part b in details thx!
Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019 cm3, respectively. (a) Calculate the intrinsic concentration of GaP at 300K (7 marks) Calculate the GaP effective mass of holes at 300K. (b) (8 marks) (c The GaP sample is now doped with donor concentration of 1021 cm3 with...
The energy gap between the valence band and the conduction band in the widely-usd semiconductor gallium...
The energy gap between the valence band and the conduction band in the widely-usd semiconductor gallium arsenide (GaAs) is A- 1.424 ev. (k 8.617x105 eV/K) At T 0 K the valence band has all the electrons. At T 0 K (shown), electrons are thermally excited across the gap into the conduction band, leaving an equal number of holes behind. Conduction band Energy gap, A Valence band 1) The density of free electrons (ne number per volumer) in a pure crystal...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns in diameter and 1 micron long. Electrons have a mobility of 1000/cm V-sec and holes have a mobility of 200/cm V-sec. The effective mass of an electron in the conduction band is 1.2 and that of a hole in the valence band is 0.6. The semiconductor operates at room temperature. a. What is the probability of finding an electron at an energy 0.5eV above...
The gap between valence and conduction bands in silicon is 1.12 eV. A nickel nucleus in...
The gap between valence and conduction bands in silicon is 1.12 eV. A nickel nucleus in an excited state emits a photon with wavelength 5.87x10-4 nm. How many electrons can be excited from the top of the valence band to the bottom of the conduction band by the absorption of this gamma ray? Provide your answer in mega electrons (mega x106).
A GaAs and a GaP laser are doped with the same Ga concentration of 1026 /m3....
A GaAs and a GaP laser are doped with the same Ga concentration of 1026 /m3. They are also Pumped, the same, and have 0.1% of the Ga concentration in the upper laser level. Determine the radiated power of a cubic volume 10 mm emitted by each of these laser. The upper level lifetimes of GaAs and GaP are 230 ms and 230 ms, respectively and the emission wavelength, of both, is 530nm. Calculate the radiated power per unit frequency...
3. The figure below shows a schematic of the dispersion for the conduction and valence bands...
3. The figure below shows a schematic of the dispersion for the conduction and valence bands for particular semiconductor. The conduction band has dispersion equation a 10-35 E (3 x 10 19) [2 x 10 and the valence band has dispersion equation E (4 x 10-37A2 where in both cases E is in units of joules and k in units of m1 E 6x 10-19 J 2 6 x 10 m -6 -4 -2 2 k (a) Is this a...
GaAs laser (a) The degenerate occupation of the conduction and valence bands with electrons and holes helps to maintain the laser requirement that emission must overcome absorption. Explain how the degeneracy prevents band-to-band absorption at the emission wavelength of 867 nm (b) Assuming equal electron and hole concentrations, and same effective masses for electrons and holes, calculate the minimum carrier concentration n -p for population inversion in GaAs at 300 K. The intrinsic carrier concentration at 300 K in GaAs...
Please explain part b in details thx!
Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019 cm3, respectively. (a) Calculate the intrinsic concentration of GaP at 300K (7 marks) Calculate the GaP effective mass of holes at 300K. (b) (8 marks) (c The GaP sample is now doped with donor concentration of 1021 cm3 with...
The energy gap between the valence band and the conduction band in the widely-usd semiconductor gallium arsenide (GaAs) is A- 1.424 ev. (k 8.617x105 eV/K) At T 0 K the valence band has all the electrons. At T 0 K (shown), electrons are thermally excited across the gap into the conduction band, leaving an equal number of holes behind. Conduction band Energy gap, A Valence band 1) The density of free electrons (ne number per volumer) in a pure crystal...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns in diameter and 1 micron long. Electrons have a mobility of 1000/cm V-sec and holes have a mobility of 200/cm V-sec. The effective mass of an electron in the conduction band is 1.2 and that of a hole in the valence band is 0.6. The semiconductor operates at room temperature. a. What is the probability of finding an electron at an energy 0.5eV above...
3. The figure below shows a schematic of the dispersion for the conduction and valence bands for particular semiconductor. The conduction band has dispersion equation a 10-35 E (3 x 10 19) [2 x 10 and the valence band has dispersion equation E (4 x 10-37A2 where in both cases E is in units of joules and k in units of m1 E 6x 10-19 J 2 6 x 10 m -6 -4 -2 2 k (a) Is this a...
Most questions answered within 3 hours.
-
I need help with an executive summary for Adidas Items to be
included are a discription...
asked 30 seconds ago -
19. Most progressive reform activists were white
and a. upper class. b. lower class. c. wokring...
asked 2 minutes ago -
Water has significant IMF, which result in many of its unique
properties—high boiling point relative to...
asked 7 minutes ago -
If X is a binomial random variable with n = 8
and p = 0.2, the...
asked 12 minutes ago -
Seasonal or cyclical variation in a time-series model…
---exhibits irregular
variation that can be accounted for...
asked 13 minutes ago -
Please use Barney's VRIO framework of analysis to evaluate a
firm's competencies. Please choose a specific...
asked 26 minutes ago -
Where would you expect to have diabetes contributing to the most
DALYs in 2035, according to...
asked 27 minutes ago -
1.) Major league baseball salaries averaged $1.5 million with a
standard deviation of $1 million in...
asked 36 minutes ago -
A hedge fund is holding a three-year,
$10 million face value 6 percent annual coupon bond...
asked 48 minutes ago -
The focal length of a makeup (concave) mirror is 0.48 m. What
magnification does this mirror...
asked 52 minutes ago -
TRUE/FALSE
Long-lived assets that are tangible in nature, used in the
operations of the business, and...
asked 53 minutes ago -
A dragon biologist is setting up an experimental population of
1000 individuals. In dragons, pointy crests...
asked 1 hour ago