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Show that the current through two transistors in series is equal to the current through single...
Shown below is two MOS transistors in series. Assuming the transistors have the same threshold voltage, and that Vos is large enough, argue in which region of operation Mi and M2 are. a. b. Show that for the equivalent transistor, B- Assume both transistors are square-law, and ignore channel length modulation. DS VGs Shown below is two MOS transistors in series. Assuming the transistors have the same threshold voltage, and that Vos is large enough, argue in which region of...
3. Consider the circuit in the Problem #2 again. Assume all transistors are in saturation and Vdd is sufficiently high to keep all transistors in saturation. Assume k, '=100 JAV, k,'= 50 A/V", Vsar = 300mV, n = 0.04, and the DC bias current I1 = 50uA. Also assume all the transistors have the same W/L = 10) except for M3, M6, M7, and M16. M3 is twice as wide, whereas M16 is a quarter (0.25) as wide as the...
1. Consider the following circuit using 0.18um technology transistors Q, and Qn specified by processing parameter k-eCon W/L)-1.6 mA/N, Vn-0.5V,,-0, voltage at drain of transistor Qi is Voi-0.7V, and both transistors are identical. a. Identify the type of transistors, e n-MOSFET, or p-MOSFET, or D-MOSFETor b. Calculate the current through both transistors Ip, and the value of resistance R, and c. Find VGsiand VGs2 of the two transistors Qi and Q d. What is the mode of operation of the...
Please help me homework problem for semiconductor devise, show all the steps and solve a upto e, tanks :-) Figure 2 is the IV characteristics of an NMOSFET with Tox 10 nm, W 10 um and L 2 um. (Assume m 1 and do not consider velocity saturation.) (a) Estimate Vt from the plot. (b) Calculate Vt using the currents shown on plot. (c) Estimate u1s in the inversion layer. (d) On the plot show triode and saturation regions e)...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
3. Consider the following multistage amplifier. The current source values are 1, -2mA, I, - 1mA, and 1 - 1mA. Also, Voo - Vss - 6V. +VDD (a) If the DC voltage at the output is OV, find all DC currents at the drains of all transistors. Also, find the DC voltages at the drain, gate, and source terminals for all transistors (you can put the values directly on the figure). Use k.(W/L) - k.(W/L) = 2mA/V. And Vin -...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
R, Figure P7.49 .50 Figure P7.50 shows a current source realized using a current mirror with two matched transistors Q, and o, . Two equal resistances R, are inserted in the source leads to increase the output resistance of the current source. If Q, is operating at gm 1 mA/V and has VA-= 10 V, and if the maximum allowed de voltage drop across R, is 0.3 V, what is the maximum avail- able output resistance of the current source?...
please answer 1-3 thanks 1. Consider an n-channel MOSFET with tax = 6 nm, 1. = 425 cm /V., V,=0.8 V, and W/L = 15. What is the v of k,? (4 points) Identify the region of operation and find the drain current in the following four cases. (4 po each) (Total 20 points) Use &= 3.9 for Silicon. a. Vos = 2.5 V and Vps = 1.5 V b. Vos = 2.0 V and vps = 2.5 V c....