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2.A common-emitter circuit with an emitter bypass capacitor is shown in Figure 2(a) and its small-signal...
Please answer clearly 2. Consider the circuit shown in Figure 1. Determine values of Ri, R2, and Rc to provide the quiescent emitter current 1.5 mA and the quiescent collector to emitter voltage 5V. Assume β 100, Re-I㏀、Va= 200V, VBEon-0.7V, and VT= 25mV. R1 Rc Vcc に 10v R2 Re Figure 1: BJT biasing configuration 2. Consider the circuit shown in Figure 1. Determine values of Ri, R2, and Rc to provide the quiescent emitter current 1.5 mA and the...
For the circuit shown below, let Vcc 9 V R2 RE-0.11 kQ, R1 3.6 k2. and R2 -5.6 kQ. The transistor parameters are β-200, VBE(on)-OTV, VA-100 V and VT = 0.026 V. (a) Determine the quiescent value of IEQ (b) Find the small-signal voltage gain Av Vo/vs (c) Determine the output resistance R, looking into output terminals Av= 0.5589 Ro-0.4688 Ω Ro-0.9118 Ω leQ- 23.76 mA Ra " 0.6538 Ω leo 39.52 mA A, 0.9938 For the circuit shown below,...
can someone help me with part c mpt tope alswersol the sdme part of you willbe penalized for this. Question 1 1 pts For the circuit shown in Figure 6.49, let Vcc -9V.RE 0.11 kQ, R1 3.6 k2, R2 5.6k(2, and Rs -o Ω . The transistor parameters are β-200. VBE(On)-Q7V, VA - 100 V and VT 0.026 V.(a) Determine the quiescent value of lEQ. (b) Find the small-signal voltage gain Av-vo/vg (c) Determine the output resistance Ro looking into...
4. Consider the common-emitter amplifier of Figure 5. Draw the dc circuit and find ICQ. Draw the dc circuit and find ICQ. Find the value of Then, calculate values for Voltage gain Av, Open circuit voltage gain Avoc, input impedance Zin, current gain Ai, power gain G, and out- put impedance Zo. Assume operation in the frequency range for which influence of coupling and bypass capacitors can be ignored +15 V +15 V B 100 100 Ω 47ka Figure 5...
4. Consider the common-emitter amplifier of Figure 5. Draw the dc circuit and find「CQ. Draw the dc circuit and find ICQ. Find the value of r. Then, calculate values for Voltage gain Av, Open circuit voltage gain Avoc, input impedance Zin, current gain Ai, power gain G, and out- put impedance Zo. Assume operation in the frequency range for which influence of coupling and bypass capacitors can be ignored. +15 V +15 V s in 100Ω CE Figure 5
Design the inductively coupled common emitter (CE) amplifier shown in Fig. for Q. 7(a) to drive a 2 kQ. load with Vcc = 12 V, VBE = 0.7 Y, β = 200, Rin = 4 kQ. and Av = -10. Determine the current gain Ai and power delivered to the load Po. [Hint: Draw the small signal equivalent circuit and use Rg = 0.1BRę, where R, =R,||R, ). -- -- oom. . b 09 PR Vo - . Fig. for...
R1= 12 K ohm R2= 12 K ohm rout= 1.2 K ohm For the circuit in Figure 1, assme that the voltage drop across the infrared emitter is 1.3 V. Determine the value of RE that will set the current through the emitter to a value within the range of 50 mA to 80 mA. For the circuit in Figure 1, assume Rx 10 kQ and Vs 5 V. Using the equation given in the introduction section, determine the value...
2. Consider the circuit given below. For Rsu" 5 kQ, RB-RBI/RB,-10 kS2. T-1 kQ, β,- 100, and RE = 1.5 kQ, what is the ratio CE/CCl that makes their contributions to the determination of fi equal? Ra C2 v, R2 2. Consider the circuit given below. For Rsu" 5 kQ, RB-RBI/RB,-10 kS2. T-1 kQ, β,- 100, and RE = 1.5 kQ, what is the ratio CE/CCl that makes their contributions to the determination of fi equal? Ra C2 v, R2
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and open circuit gain First, design a common emitter BJT amplifier Second, analyze the amplifier.( Avo, Gv, Rin, Rout) Third, compare your calculation with Multisim. Report must include comparison between your calculation & simulation results overall voltage gain, open circuit voltage gain, input resistance, and output resistance. This design project is not group work, must be done individually. Type your report. Design a discrete common emitter BJT amplifier.(Determine...
Figure 1 is a common-emitter amplifier (with input divider). Calculate the base resistance Rb1 that is needed to bias the device at a collector voltage of Vc≈ 6-7 V. Assume a nominal value of β≈ 200 for this calculation. Λ +10 V 2.2 ΚΩ & Kh1 1 1μF V. 10 ΚΩ 1μFT o " Πι ΓW-0 . Y 10028 10 ΚΩ 1ΚΩ ξ 10 μF