Can you help me solve this problem and show the steps?
Can you help me solve this problem and show the steps? Design a resistively loaded NMOS...
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subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three terminals are: Vg=2 V, Vs=5v, Vd=3.5V, then the transistor is operated in a) Cut off region b) Triode region c) Saturation region d) Unknown 6. The voltage transfer characteristic of a CMOS inverter is shown in Fig. 4. Threshold voltages Vrn = |Vpl = 0.5V. If Vpo=5V and the input v=3V, then Saved to this PC a) Both PMOS and NMOS in triode region...
4. (25 points) (Show all work) Design an inverter circuit using a NMOS transistor and a resistor with Vout-5.0 when Vin-OV and Vout-0.3 V when Vin-SV with Kn-300uA/V" and a VrN = 1 V. Use ID-Kn(VGS-VTNJVDs. You have a 5V supply available to power the circuit.
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
Question 3 a) Design the resistive load based NMOS inverter in Figure Q3a to provide VOL = 200 mV and to draw a supply current of 80 pA in the low-output state. Let the transistor be specified to have VTN = 0.7 V, KN = 125 JA/V, and I = 0. The power supply VoD = 2.5 V. State any assumptions made. Calculate the required values of W/L and Rp. ii) How much power is drawn from Voo when the...
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8.1 For an NMOS differential pair with a common-mode voltage Vay applied, as shownin Fig. 8.2, let VppV 1.0 V k, = 0.4 mA/V2. (WIL),.-10·V," 0.4 V, 1-0. 16 mA. R 5 k2, and neglect channel-length modulation. (a) Find Vov and Vos for each transistor. (b) For Vo 0, find V, lp Ip, Vo, and V (c) Repeat (b) for Vcu+0.4 V (d) Repeat (b) for Vc-0.1 V. (e) What is the highest...
Q1,Q2 and Q3
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Question Consider the following inverter design problem: Given VpD 5V, k' 30uA/V , and Vo 1V, design a resistive-load inverter circuit with VoL 0.2V . Specifically, determine the (W/L) ratio of the driver transistor and the value of the load resistor RL that achieve the required VoL- (10 marks) Question 2 Consider a pseudo-nMOS NOR2 gate, with the following parameters: 1V., Vro,load -31V, y = 0.4V1/2, andl F|= 0.6V. The transistor Hn Cox =254A/V2, Vro,driver...
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QUESTION 1 Consider an inverter with VTC shown in the figure. The noise margin for high input is vo Voн Slope = -1 Slope = 1 VM M Slope Vol 0 VoL VIL Vio VIN VOM Vi NM = VDO NM, VH-VOL NM) -VOH - VIH NM-Vow-VIL QUESTION 2 Which of the following statements is (are) True for the noise margins of CMOS inverter? (check one or...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
5). In this problem, you are asked to consider the ac hybrid-x model for an NMOS transistor and to relate the capacitors to the physical device structure. Recall the oxide capacitance per unit area ox) appears in the DC Ip-Vs relationship for triode and saturation regions. The NMOS transistor has kn-0.2 mA/V2, W 10 μm, L-I μm and μ,-1000 cm2/Vsec. a) Find the total gate-to-channel capacitance for small VDs, CG-cho. Hint: this is the parallel-plate capacitance between the gate and...
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BEE 433 Electronic Circuit Design Problem Set #1 Due date: Answer the following problems and Circle the answers. 1.1 (Fig. 1.1 from the textbook) In the voltage amplifier circuit of Fig. 1.1, let vs = 100 mV, Rs = 100 k 52, Vi = 75 mV, RL = 10 S2, and vo = 2 V. If connecting a 30-S2 resistance in parallel with RL drops vo to 1.8 V, find Ri, A., and R....