6. Consider a germanium semiconductor at T = 300 K. Calculate the thermal equilibrium concentrations of...
6. Consider a germanium semiconductor at T = 300 K. Calculate the thermal equilibrium concentrations of n, and p. for (a) N. = 10 cm", N. = 0, and (b) N. = 5 x 10 cm), N. = 0.
only number 5 5. The value of p, in silicon at T = 300 K is 105 cm. Determine (a) E.- E, and (b) n.. 5. The value of p, in silicon at T = 300 K is 10 cm. Determine (a) E-E, and (b) n.. 6. Consider a germanium semiconductor at T = 300 K. Calculate the thermal equilibrium concentrations of n, and p. for (a) N. = 10 cm", N. = 0, and (b) N. = 5 x...
P4. a. Consider Si doped with P at 2x10^16 cm^-3. determine the carrier concentrations ni, p, and n at T = 300 K. b. Consider a semiconductor with ni = 2.4x10^13cm-3 that is doped such that ND=5x10^13cm^-3. Determine the carrier concentrations n and p. c. Consider a compensation Ge semiconductor with ni = 2.4x10^13 cm^-3 doped at concentration NA=5x10^13 cm^-3. Determine the thermal equilibrium carrier concentration n and p.
Consider an abrupt p-n diode - made of an unknown semiconductor - in thermal equilibrium with as many donors in the n-type region as acceptors in the p-type region and a maximum electric field of -13 kV/cm and a total depletion layer width of 1 µm. (assume es/ e0 = 12) a) What is the applied voltage, Va? b) What is the built-in potential of the diode? c) What are the donor density in the n-type region and the acceptor...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
The resistivity in an n-type GaAs semiconductor at T = 300 K is ρ = 2 Ω-cm. Determine the thermal-equilibrium values of electron and hole concentration. Question 7 options: a) no = 3.67 X 1014 cm-3 po = 8.83 X 10-3 cm-3 b) po = 3.25 X 1015 cm-3 no = 6.92 X 104 cm-3 c) po = 6.92 X 1015 cm-3 no = 3.25 X 104 cm-3 d) no = 8.83 X 1014 cm-3 po = 3.67 X 10-3...
Can someone help me with this question step by step? Thanks! Problem 1 (25 points) 17 Consider a homogeneous p-type Si semiconductor (NAx10" cm) in thermal equilibrium for t < 1 μs. An external source is turned on at t us for a period of 0.1 us and produces excess carriers uniformly at the rate ofg 10 cms Assume: 2131 cm cm φ for 0 1 .0Įs a) (5 points) Determine the expression of on b) (5 points) Determine the...
Use K and initial concentrations to calculate equilibrium concentrations. Consider the equilibrium system involving the decomposition of hydrogen iodide. 2HIG) P H2(g) +12(g) [H2] [12] K=— =1.98x10-2 at 895 K (HI) A flask originally contains 0.373 M hydrogen iodide. Calculate the equilibrium concentrations of the three gases. [HI] = [H2) = [12] =
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...