A conceptual design of an NMOS amplifier is shown below. If Vt 0.8 volts, k 0.4...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
Exercise 7.37: Design the bias circuit for the CS amplifier. Assume the MOSFET is specified to have Vt 1 V, kn = 4mA/V2 and V4 = 100 V. Neglecting the Early effect, design for ID-0.5mA, VS= 3.5 V, VD6 V and VDD 15 V. Specify the values of RD and Rs If a current of 2 μΑ is used in the voltage divider, specify the values of RG1 and RG2. Give the values of the MOSFET parameters gm and ro...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 k2, VDD- +8V and Vss--8V. The NMOS transistors in the circuit are nominally identical, with kn 2 mA/V2, VTn 1.0 V and ro 100 k2. The PMoS transistors in the circuit are nominally identical, with kp 2 mA/V2, [VTpl 1.0 V and ro 100 kΩ M3 M4 0 M1 M2 a) First consider the DC bias point. Assuming that the current mirror requires at...
MOSFET design, KCL, KVL, nmos, pmos
40μΑ Qi. Consider the amplifier shown below. Assume the MOSFET has K,-- V. IV, Cg,-0.8pF, Cgdー0.2pF and no body effect. Given RB-100Rs, RREF the small signal AC gain is -1.6. 4kQand (a) Design RB and Rs so that the fu is 40MHz (b) Design CL so that the fi is 50Hz. 10V Mi RREF RB Rs M2 CL RD 1 00kΩ
Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0
mA/V2). Let VDD = 5.0 V, VSS =
-5.0 V, R1 = 14.0 kohm, R2 = 6.0 kohm,
RD = 1.2 kohm and RS = 0.5 kohm. Answer the
following questions assuming the transistor is at its saturation
mode.
a) Calculate VG versus ground (not VGS)
(hint: voltage division by R1 and R2 between
VDD and VSS).
b) Calculate VGS. (hint: IDS obtained by
formula = IDS obtained...
Design a common-source MOSFET amplifier such that - Rg is a multiple of 10 - Id = 0.52 mA - the amplifier input resistance is in the range of mega ohms - | Avo | = 16.7 V/V - RL = 20k - Vsig has a 2kHz frequency - Rsig = 400k, and is the input and the MOSFET has: Vt = 0.8V k = 5 mA/V^2 VA = 80 V Assume capacitors are shorted in the signal circuit and...
3. Design a n-channel JFET C-S amplifier circuit for the following specifications Voltage Gain input resistance Ri-100kΩ Load resistanceR2k2 Given supply voltage VDD 20V Αν--10 Rss is fully bypassed The input source resistance Rs 02, Ipss-8mA and Vp4V Assume RD and R1 but must find R2 and RSS using the given specifications. Find the DC Operating Points values (VGs, ID and VDs) Draw the actual circuit and its ac equivalent circuit
Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier. Notice the absence of a source resistor Rsig and load resistor R. If we know how the present amplifier (the one on Figure P3a) behaves without Rsig and RL, we can infer its behaviors if Rsig and R were to be added. design the amplifier circuit on Figure P3a, i.e., you have to find appropriate values for RGj You are to RG,, RD, and...
Shown below is a single stage common emitter amplifier with a unipolar dc power supply using an 2N3904 NPN BJT as the active device. It is specified that V+ 40 V, C1 C2CE 100uF, Ro-7.5 k2, REi-5.1kS2, and Ri - 36k52. Design the circuit so that the dc collector current is 2 mA and the magnitude of the small-signal midband voltage gain is 32.3. For the design calculations assume that the base-to- emitter dc voltage drop is 0.65 V, the...