1.what is the relation between emitter current and collector current in the transistor.
2. what is the relation between emitter ,collector and base current in th transistor ??
1.what is the relation between emitter current and collector current in the transistor. 2. what is...
d emier junction is forward biased and emitter-collector junction is reversed biased t. In cut oft mode junction is forward biased and emitter-collector junction is forward biased junction is reversed biased and emitter-collector junction is reversed biased junction is reversed biased and emitter-collector junction is forward biased is c) The base-emitter ) The to operate in active mode Collector-Base junction must be 7 For the BJT a) Heavily doped b) Must reversed bias c) Must be forward bias d) Lightly...
k) Biasing of a BJT transistor is the setting of the collector emitter voltage and the collector current to the desired dc values. These voltages and currents determine the operating point (quiescent point, Q point). The three circuits given in Fig. 6.4 are designed to give the same operating point 12V 12V Rc Rc 12V R1 ?1 Rc R1 ?? Figure 6.4 a. Obtain the expression for VC in terms of the transistor parameters ?, VBE, Ico and the circuit...
1) Plot base current of a npn transistor versus base-emitter voltage 2) Plot Gate current of a MOSFET transistor versus gate-source voltage
(vii [2 Marks The injection current into the emitter region of bipolar transistor with emitter doping of NE is too large compared to the injection into the base. The emitter injection current needs to be reduced by a factor of 2. What value of emitter doping density would you use? (а) NE? (b) 2Nв? (с) NE? (d) 0.5Np? (е) 0.25.Nв? (vii [2 Marks The injection current into the emitter region of bipolar transistor with emitter doping of NE is too...
Q.11. Calculate the base, collector and emitter currents for the circuit given in Fig. 01. Also, determine the value of the voltage drop between collecter and emitter (Ve). Assume that the transistor is in active region and the value current amplification factor is 200. Given that the base-emitter voltage V is 0.7 V. Vcc - 10V 21 Ves = 4V W 220 KS2 Fig. Q11
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
Design a pnp transistor circuit using one emitter and one collector resistor connected appropriately to ±3 V voltage sources so that IE-0.5 miA and VBC-1V. Use β = 100. Design a pnp transistor circuit using one emitter and one collector resistor connected appropriately to ±3 V voltage sources so that IE-0.5 miA and VBC-1V. Use β = 100.
c) If the collector current of a transistor is 0.3 amps and the base current is 0.001 amps, what is the current gain? (2 marks) Total 10 marks Space to answer Question 5 here
1) Two pnp BJTs are identical except that the emitter and collector region doping are interchanged, as illustrated below. 1017 1017 101s 10 1014 04 E B C ??? Transistor A Transistor B a) Which transistor is expected to have the greater emitter efficiency? Explain. b) Which transistor will exhibit the greater sensitivity to base width modulation under active mode biasing? Explain. If limited by avalanche breakdown of the C-B junction, which transistor will exhibit the larger VcB0? Explairn. c)
8. Find a) base current is , b) collector current ic and c) voltage between collector and emitter VCE Vcc=4.6V VCC RB=200k R WWW RRC=lk B=100 n-p-n BJT