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QUESTION 4 For the Circuit shown below. Find the Collector Current Vcc = 12 V Rp...
Question 1 (4 points) Voc 3 Rc RB13 The voltage-divider bias circuit shown has Rc = 2 k12, RE = 400 12, RB1 = 300 k22, RB2 = 100 ks and Vcc = 25 V. Assume that VBE = 0.7 V and B = 90. Determine the Q- point (Ic and VCE) for the bias circuit. OVCE = 5.91 V Ic = 3.09 mA OVCE = 12.07 V Ic = 2.40 mA O VCE = 14.22 V Ic = 4.48...
(13 points) For the transistor in the circuit shown below, VBE(on) = 0.7 V, Vce(sat) = 0.2 V, and B = 100. Determine the value of the collector current. +5 V R=1.2 ko R =33 k2 -5 V
It Kind of goes without saying but if you have no knowledge than dont comment or try and answer this question you dope Questions 1-3 below are about the amplifier circuit of Figure 1. Here Vcc is a fixed voltage The base voltage vB(t) is time-varying, and is of the form vB(t) V(t) where VB is a DC offset, and vb(t) is a time-varying purely AC signal. Suppose the amplitude of vb is A. Assume that the capacitor C is...
Problem: In the circuit shown in Figure 1, Vee = 1.2 V, Vcc = 20 V, Rp = 60 kN, Rc = 2 k. The input signal is a sinusoidal voltage given by Vin(t) = 0.2 sin(2000 ) V. The input and output characteristics of the transistor are provided on Page 2. (1) Find Ig, Ic and Vce. (30 points) Hint: Use the load line method. (Vor.) and (Vce: 1c) are the operating points of the transistor in the input...
age 1: R 1.5 k22 ge 2: R w 62 ko V88= 4.0 V3 + Vcc=15 V Bpc = 100 = @ se 3: e 4: Refer to the given circuit., assume VBE = 0.7 V. Find the values of (1) 1B 5: (2) Ic (3) VCE (4) Which region is the BJT operating in?
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B = 100 is connected as follows: The emitter is grounded, the base is fed with a constant-current source supplying a dc current of 10 u A, and the collector is connected to a 5-V dc supply via a resistance Rc of 3 k12. Assuming that the transistor is operating in the active mode, find VBE and Vce. Use these values to verify active-mode operation. Replace...
Design a transistor biasing circuit as shown below. Assume ß = 100, Ice = 10 mA, VE = Vcc/3, VCEQ = Vcc/3 and VBE = 0.7 V. RTH = 0.1 (1 + BRE. Also find the power rating of all resistors. +15V R2 Rc V 10 R1 RE
Experiment 2: Good biasing Set up the circuit with R2 12 k2, R RE 1 k, and Vcc 15 V 39 k2, Rc = 2 k?. Circuit Analysis: Compute Ic, I, and VCE PSpice Simulation: a) Simulate the circuit with PSpice (bias point details only) and compare values of Ic, IB, VCE, and VBE from PSpice simulations with your analytical calculations. b) Rerun your PSpice simulations for temperatures of 0 and 60°C. Make a table of Ic IB, VCE, and...
Q. 3. Design a transistor biasing circuit as shown below. Assume ß = 100, lco = 10 mA, VE = Vcc/3, VCEQ = Vcc/3 and VBE = 0.7 V. RTH = 0.1 (1 + B)RE . Also find the power rating of all resistors. +15V R2 Rc V10 R1 RE
1) Calculate the value of the base current IB. (in μA) 2) Calculate the value of the base collector current IC. (In mA) 3) Calculate the value of the collector-emitter voltage VCE. (In V) Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc