ideal) 8) Ovaw the I-V croactenshc or a mdes (nc diode. Label euenwythineg carefully 8) F...
11. (10 points) Draw the I-V Characteristic of a forward voltage drop diode model (not ideal). Label everything carefully!
Question 1: An ideal diode turns on for positive anode-cathode voltages. But the characteristic of diode does not appear to show any ID values when voltage across the diode is greater than zero (VD > 0). How do you explain this plot? ---Reverse bias Forward bias --- Question 2: Plot (I-V) characteristic if we place a 10 12 resistor in series with the diode? Question 3: Plot (I-V) characteristic if we place a lV voltage source in series with the...
A V vs I curve for a diode is plotted Label the appropriate axes V and I. The plot below shows the current through the diode is 0.002 A at 0.6 V and 0.02 A and 0.7 V.Calculate the resistance at each voltage. Does the resistance of the device increase,decrease or remain the same as the voltage increases from 0.6 V to 0.7 V? Is this an ohmic or non-ohmic conductor?
Draw an I-V curve for the PN junction diode using a Shockley diode equation, and explain the cause of the shape of the I-V curve with the operation principle of diodes. (Assume the temperature as 10+(10a+b) ?, the saturation current as (c+0.1d+0.01e)x10-8 A, and the ideality factor as 1+0.1f when your student ID number is “20abcdef”. For example, if your student ID number is 20121234, the temperature, saturation current, and the ideality factor becomes 10+(10*1+2) ?, 1.23x10-8 A, and 1.4...
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Question 2 (5 marks) a) State the ideal-diode equation. b) Forward-bias-voltage of V, 0.625 V is applied to a silicon p-n junction with its cross 10 cm2. At T 300 K, it has the following parameters: n, 1.5 x 100 cm3 N, 5 x 1016 cm3 Na-1 x 106 cm D, 25 cm'ls D, 10 cm/s Tao 5 x 10s tpo 1 x 10s sectional area, A Calculate: i) the minority electron diffusion current at the space charge edge,...
Please do not copy the previous answer for this question. and
please explain and write clearly. Many thanks!
Please answer questions 1,2,3 for n=1,8=2,a=3,B=4,8=5 The component values in the circuit shown in Fig. I are: • • • • vs(t) = A sin (2 reft) mV, where A = (2000+ n) and f = (10+8) Hz Ri -(1000 + a)2 R2-(1000+B) 22 R, (1000+ €) 22 For example, if n = 8,8 = 5 and a=1, Vs(t) = 2.008 sin(...
Q8. Plot the waveform of Vo(t), assuming ideal op amp in Fig. 8 0 V 2Ω 2Ω X-12%-time (s) 0 4 +15V 2Ω -10 V Vo(t) 2Ω 12 V Fig. 8
5. (8 points) Assume Vin = 5 sinut (for 0 <<<), ideal diode model and zero initial condition across G. Now, plot the input and output as a function of time on the same plot for each circuit shown below (show every feature and value clearly) Vino th o Vout b) Vin Vout TU c) Vin Ae U i F d) o Var Vina K D BIP are
Question 1 (a) Draw the actual OR the idealized i-v characteristics of a MOSFET. Propery label the drawn graph. [4 marks] (b) Name any two types of diodes AND any two types of thyristors. [4 marks] (c) Find the following values for the periodic current output of a diode rectifier with square voltage input and resistive load. The output is shown in the figure below. (i) Average (ii) Root mean square (RMS) (ii) RMS of the 1st harmonic (iv) Total...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...