Draw an I-V curve for the PN junction diode using a Shockley diode equation, and explain...
Draw an I-V curve for the PN junction diode using a Shockley diode equation, and explain the cause of the shape of the I-V curve with the operation principle of diodes. (Assume the temperature as 10+(10a+b) ?, the saturation current as (c+0.1d+0.01e)x10-8 A, and the ideality factor as 1+0.1f when your student ID number is “20abcdef”. For example, if your student ID number is 20121234, the temperature, saturation current, and the ideality factor becomes 10+(10*1+2) ?, 1.23x10-8 A, and 1.4 respectively.)
ID for instance : 20140922
Homework Answers
Add Answer to:
Draw an I-V curve for the PN junction diode using a
Shockley diode equation, and explain...
The parameters of a pn junction diode at 300K are listed in the following table, the...
The parameters of a pn junction diode at 300K are listed in the following table, the cross section area of the junction is 105 cm2 n region N10" cm Hu = 850 cm?/V-s p region t,e = 10-6 s ,1" 1250 cm2/V-s 11,-420 cm2/V-s 320 cm/V-s (a) Sketch a band diagram at equilibrium (b) Find the reserve saturation current (c) Find the ideal diode current with forward bias voltage at 0.5 V and 0.7 V, respectively. (d) Find the current...
Please solve part d in MATLAB Problem Statement Consider the Shockley diode equation, which approximates the...
Please solve part d in MATLAB
Problem Statement Consider the Shockley diode equation, which approximates the current-voltage (characteristic) curve of a diode: Here, is the current flowing through the diode (in amperes), and Vo is the voltage drop across the diode (in volts). VT is the thermal voltage, which varies based on the temperature. Assume that VT0.026 V, which is true when the diode is a little above room temperature. Therefore, in this equation, there are two unknown parameters that...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explai...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...
4.23 (a) Oualitatively hand-sketch log(I) vs. V for a Schottky diode and a PN diode in the same f...
4.23 (a) Oualitatively hand-sketch log(I) vs. V for a Schottky diode and a PN diode in the same figure. Comment on the similarity and difference. (b) Calculate the lo of a 1 mm2 MoSi2 on N-type Si Schottky diode. Compare it with the 10 of a 1 m m-p"N diode with Nd = 1018 cm-3 andゲ1 μα Compare the forward voltage of the two diodes in (b) at a forward current of 50 A. Besides increasing the diode area (cost),...
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properti...
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed ...
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed to operate in reverse conduction. Zener breakdown occurs at a precisely defined voltage, allowing the diode to be used as a voltage reference or clipper. While Zener diodes are usually operated in reverse conduction, they may also be operated in cutoff and forward conduction. There are two different effects that are used in "Zener diodes". The only practical difference is that the two types have...
The parameters of a pn junction diode at 300K are listed in the following table, the cross section area of the junction is 105 cm2 n region N10" cm Hu = 850 cm?/V-s p region t,e = 10-6 s ,1" 1250 cm2/V-s 11,-420 cm2/V-s 320 cm/V-s (a) Sketch a band diagram at equilibrium (b) Find the reserve saturation current (c) Find the ideal diode current with forward bias voltage at 0.5 V and 0.7 V, respectively. (d) Find the current...
Please solve part d in MATLAB
Problem Statement Consider the Shockley diode equation, which approximates the current-voltage (characteristic) curve of a diode: Here, is the current flowing through the diode (in amperes), and Vo is the voltage drop across the diode (in volts). VT is the thermal voltage, which varies based on the temperature. Assume that VT0.026 V, which is true when the diode is a little above room temperature. Therefore, in this equation, there are two unknown parameters that...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
4.23 (a) Oualitatively hand-sketch log(I) vs. V for a Schottky diode and a PN diode in the same figure. Comment on the similarity and difference. (b) Calculate the lo of a 1 mm2 MoSi2 on N-type Si Schottky diode. Compare it with the 10 of a 1 m m-p"N diode with Nd = 1018 cm-3 andゲ1 μα Compare the forward voltage of the two diodes in (b) at a forward current of 50 A. Besides increasing the diode area (cost),...
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed to operate in reverse conduction. Zener breakdown occurs at a precisely defined voltage, allowing the diode to be used as a voltage reference or clipper. While Zener diodes are usually operated in reverse conduction, they may also be operated in cutoff and forward conduction. There are two different effects that are used in "Zener diodes". The only practical difference is that the two types have...
Most questions answered within 3 hours.
-
Calculate the number density of argon gas at a temperature of
24C and a pressure of...
asked 1 hour ago -
Alternative
Classification
How to Estimate
Probabilities from Data? ( For continuous Attributes)
And How to generate...
asked 1 hour ago -
An explosion breaks a 20.0-kg object into three parts. The
object is initially moving at a...
asked 2 hours ago -
Calculate the approximate number of residues of Rubisco, which
is involved in carbon fixation in plants,...
asked 3 hours ago -
Other decisions about scientific claims can have a much broader
impact.ENERGYarrow-10x10.png, environment, health, security - all...
asked 4 hours ago -
I need to write a research paper and work cited about this
topic: The United States...
asked 4 hours ago -
Hello! I was wondering if I could have some help?
If the vapor pressure of carvone...
asked 5 hours ago -
An economist wants to estimate the mean per capita income (in
thousands of dollars) for a...
asked 5 hours ago -
What would be the input/output characteristic of a circuit
obtained by putting two of your 2's-complementers...
asked 5 hours ago -
In Drosophila, the transition from the syncytial blastoderm
stage to the cellular blastoderm stage is a...
asked 5 hours ago -
Project management question:
Name 3 different types of resources (hint: humans are one
type)
asked 6 hours ago -
Consider the following reaction: C 2H 2( g) + 2H 2( g) C 2H 6(
g)...
asked 6 hours ago