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Assume 1 = 0, compute W/L of M1 in the circuit below such that the MOSFET...
2. For the circuit below, find the values of W and Ro to operate the MOSFET...
2. For the circuit below, find the values of W and Ro to operate the MOSFET at lo 0.2 mA and Vo 0.6 V The MOSFET has ν.-0.4V, ka-400 , 1 V2' 0.4 μη. +1.8 V RD 4.7 ΜΩ
For the MOSFET circuit, . Given for M1 and M2, and for M3. (A/V2) for all...
For the MOSFET circuit,
.
Given
for M1 and M2, and
for M3.
(A/V2) for all transistors.
a) Find the transconductance of all 3 transistors (in terms of
Io) and the small-signal voltage gain of the circuit.
Assume all transistors are in saturation.
b) Find R1 (looking into the source of M1)
and R2 (looking into the source of M2).
8nCor 166 L 1 L 4n Cor = 1 Vpp R1 R2
For the MOSFET circuit, . Given for M1 and M2, and for M3. (A/V2) for all transistors. a) Find the transconductanc...
For the MOSFET circuit,
.
Given
for M1 and M2, and
for M3.
(A/V2) for all transistors.
a) Find the transconductance of all 3 transistors (in terms of
Io) and the small-signal voltage gain of the circuit.
Assume all transistors are in saturation.
b) Find R1 (looking into the source of M1)
and R2 (looking into the source of M2).
8nCor 166 L 1 L 4n Cor = 1 Vpp R1 R2
8nCor
166 L
1 L
4n Cor =...
- 1. For the MOSFET amplifier, given Vpp = 5V, -VSS=-5V, Rsig = 1Kohm, =K',(W/L)= 0.8...
- 1. For the MOSFET amplifier, given Vpp = 5V, -VSS=-5V, Rsig = 1Kohm, =K',(W/L)= 0.8 mA/V2, Ven= 1.1V, 1 = 0, Q point (0.5mA, 5V). a. Draw small signal equivalent circuit b. To get the Q point, determine values of Rp. and RG c. Find input impedance Rin = _ and output impedance Rout=__ d. Determine the g11 = and g22 for the amplifier e. Find the voltage gain Av=vo/Vsig=_ --
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a...
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a circuit as shown in Fig 1. b. You will need to design the circuit such that Ip = 1 (mA), VG = 0 [V], and Vp = 5 [V]. (determine values for R1, R2, Rp, and Rs) 1 W ID = 5 unCox (Vgs - Vrh)2 = K (Vgs - VTH)2 c. Use Vpp = 15 [V], Vs = -15 [V], and 2N7000 for...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the largest value that RD can have while maintaining saturation-region operation? VDD-+5 V o-0.5mA RG2 RG2 RD Figure 4
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What...
Q5. Consider the circuit in Fig.1 (right). Assume 9m, 9o, VT, W, L, Mn, and Cox...
Q5. Consider the circuit in Fig.1 (right). Assume 9m, 9o, VT, W, L, Mn, and Cox of the transistor are knwon and isolation capacitors are sufficiently large. Assume the transistor operates in saturation. (1) Find input resistance Rin (5 marks). (2) Find output resistance Rout (5 marks). (3) Find voltage gain v./vs (10 marks). (Q4). Right - MOSFET amplifier (Q5).
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25,...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
1. In the circuit below, M, serves as an electronic switch. If Vin0, determine W/L such...
1. In the circuit below, M, serves as an electronic switch. If Vin0, determine W/L such that the circuit attenuates the signal by only 5%. Assume VG = 1.8 V. RL-100Q, μ nCox-200 μ A/V, and VTH=0.4 V. Note that the transistor is operating in Triode region. Therefore, you have to use the triode region espression to caleulahsistance of the transistor. M. out RL
Assuming a power of 1.8mW and an overdrive voltage (VGs-VTH) of 200 mV for M1, design the circuit shown below for a voltage gain (magnitude) of 4. Assume λ = 0.0, find values for w/L for Mi and M2 TD...
Assuming a power of 1.8mW and an overdrive voltage (VGs-VTH) of 200 mV for M1, design the circuit shown below for a voltage gain (magnitude) of 4. Assume λ = 0.0, find values for w/L for Mi and M2 TDD 2 Vout
Assuming a power of 1.8mW and an overdrive voltage (VGs-VTH) of 200 mV for M1, design the circuit shown below for a voltage gain (magnitude) of 4. Assume λ = 0.0, find values for w/L for Mi and...
2. For the circuit below, find the values of W and Ro to operate the MOSFET at lo 0.2 mA and Vo 0.6 V The MOSFET has ν.-0.4V, ka-400 , 1 V2' 0.4 μη. +1.8 V RD 4.7 ΜΩ
For the MOSFET circuit,
.
Given
for M1 and M2, and
for M3.
(A/V2) for all transistors.
a) Find the transconductance of all 3 transistors (in terms of
Io) and the small-signal voltage gain of the circuit.
Assume all transistors are in saturation.
b) Find R1 (looking into the source of M1)
and R2 (looking into the source of M2).
8nCor 166 L 1 L 4n Cor = 1 Vpp R1 R2
For the MOSFET circuit,
.
Given
for M1 and M2, and
for M3.
(A/V2) for all transistors.
a) Find the transconductance of all 3 transistors (in terms of
Io) and the small-signal voltage gain of the circuit.
Assume all transistors are in saturation.
b) Find R1 (looking into the source of M1)
and R2 (looking into the source of M2).
8nCor 166 L 1 L 4n Cor = 1 Vpp R1 R2
8nCor
166 L
1 L
4n Cor =...
- 1. For the MOSFET amplifier, given Vpp = 5V, -VSS=-5V, Rsig = 1Kohm, =K',(W/L)= 0.8 mA/V2, Ven= 1.1V, 1 = 0, Q point (0.5mA, 5V). a. Draw small signal equivalent circuit b. To get the Q point, determine values of Rp. and RG c. Find input impedance Rin = _ and output impedance Rout=__ d. Determine the g11 = and g22 for the amplifier e. Find the voltage gain Av=vo/Vsig=_ --
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a circuit as shown in Fig 1. b. You will need to design the circuit such that Ip = 1 (mA), VG = 0 [V], and Vp = 5 [V]. (determine values for R1, R2, Rp, and Rs) 1 W ID = 5 unCox (Vgs - Vrh)2 = K (Vgs - VTH)2 c. Use Vpp = 15 [V], Vs = -15 [V], and 2N7000 for...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the largest value that RD can have while maintaining saturation-region operation? VDD-+5 V o-0.5mA RG2 RG2 RD Figure 4
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What...
Q5. Consider the circuit in Fig.1 (right). Assume 9m, 9o, VT, W, L, Mn, and Cox of the transistor are knwon and isolation capacitors are sufficiently large. Assume the transistor operates in saturation. (1) Find input resistance Rin (5 marks). (2) Find output resistance Rout (5 marks). (3) Find voltage gain v./vs (10 marks). (Q4). Right - MOSFET amplifier (Q5).
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
1. In the circuit below, M, serves as an electronic switch. If Vin0, determine W/L such that the circuit attenuates the signal by only 5%. Assume VG = 1.8 V. RL-100Q, μ nCox-200 μ A/V, and VTH=0.4 V. Note that the transistor is operating in Triode region. Therefore, you have to use the triode region espression to caleulahsistance of the transistor. M. out RL
Assuming a power of 1.8mW and an overdrive voltage (VGs-VTH) of 200 mV for M1, design the circuit shown below for a voltage gain (magnitude) of 4. Assume λ = 0.0, find values for w/L for Mi and M2 TDD 2 Vout
Assuming a power of 1.8mW and an overdrive voltage (VGs-VTH) of 200 mV for M1, design the circuit shown below for a voltage gain (magnitude) of 4. Assume λ = 0.0, find values for w/L for Mi and...
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