2. For the circuit below, find the values of W and Ro to operate the MOSFET...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
Assume 1 = 0, compute W/L of M1 in the circuit below such that the MOSFET operates at the edge of saturation knowing Vpp = 1.8 V T Rp 1k02 that H.Cox = 2004A/V2 and Vth=0.4V M1 1 V Select one: O a. 300 b. 33 O c. 30 O d. 330 e. None of these
1 pts Design the circuit below to obtain a de voltage of +0.1 V at each of the drains of Q1 and Q2 when vci vG2 0 V. Operate all transistors at Vov 0.31 V and assume that for the process technology in which the circuit is fabricated, Vin-04 V and Cor-400 μA/V2. Neglect channel-length modulation. Determine the W ratio of Qs Voo = +0.9 V RD Ro +0.9 V 2 0.1 mA 0.4 mA -5,--0.9 V
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 k2, VDD- +8V and Vss--8V. The NMOS transistors in the circuit are nominally identical, with kn 2 mA/V2, VTn 1.0 V and ro 100 k2. The PMoS transistors in the circuit are nominally identical, with kp 2 mA/V2, [VTpl 1.0 V and ro 100 kΩ M3 M4 0 M1 M2 a) First consider the DC bias point. Assuming that the current mirror requires at...
D **7.124 The MOSFET in the amplifier circuit of Fig. P7.124 has V, 0.6 V and 5 mA/V'. We shall assume that Vis sufficiently large so that we can ignore the Early effect. The input signal v has a zero average. (a) It is required to bias the transistor to operate at an overdrive voltage 0.2 V. What must the dc voltage at the drain be? Calculate the dc drain current Ip. What value must Rp have? (b) Calculate the...
1.) 120 pointsl The parameters of n-channel enhancement MOSFET in the amplifier circuit below are: 2.042 mA/V2, 1 Val ½ 2.4 V, Kn 150 V a.) Find quiescent values: drain current i, gate-to-source voltage vGs, and drain-to-source voltage vDs b.) Determine AC model parameters: gm and ro c.) Determine amplifier model parameters: Ri, Ro and Avo d) Determine the output voltage Vl across the load RL ǐfv, 1 mYn +VDD GI〈 R ls R Mi RL 1.) 120 pointsl The...
Q3) Design the circuit of that is, determine the values of RD and RS so that the transistor operates at ID = 0.4 mA and Vp=+0.5 V. The NMOS transistor has V = 0.7 V, H, Cox= 100 A/V2, L = 1 pm, and W = 32 m. Neglect the channel-length modulation effect (i.e., assume that I = 0). Vpp = +2.5 V Z RO V--25 V
only got 40 min ELEE 3302 Student Name: [2] Determine the values of Ro and ros to establish a drain voltage of 0.2 v. Let Von = 1.1 V and kn' (w/L) = 1.0 mA/V2 Vpp = +5 V VO
1.) 120 points] The parameters of n-channel enhancement MOSFET in the amplifier circuit below are: 2.042 mA/V2, İVMİ V: 2.4 V, Kn 150 V a) Find quiescent values: drain current İD, gate-to-source voltage UGS, and drain-to-source voltage UDS b.) Determine AC model parameters: gm and ro c.) Determine amplifier model parameters: Ri, Ro and Avo d.) Determine the output voltage vi across the load RL f 1 mVp
1.) [20 points] The parameters of n-channel enhancement MOSFET in the amplifier circuit below are Ve = 2.4 V, Kn = 2.042 mA/V2, 1VMI = 150 V a.) Find quiescent values: drain current ip, gate-to-source voltage vGs, and drain-to-source voltage vps b.) Determine AC model parameters: gm and ro c.) Determine amplifier model parameters: Ri, Ro and Avo d.) Determine the output voltage vi across the load Rl if vs- 1 mVp SRC