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2.11. Due to a manufacturing error, the p-side of a pn junction has not been doped....
please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2 a) Calculate the reverse saturation current. b) Calculate the contact potential. e) Calculate the bias voltage needed to obtain...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
3) Consider you created uniformly doped GaAs pn junction. At zero bias, only 20 percent of the depletion region length is to be in the p region. The built-in barrier Vf-1.2V and at 300HK temperature. For zero bias, determine Na, Nd, Xn, Xp and Emax with assumption of 250 nm of depletion region length 3) Consider you created uniformly doped GaAs pn junction. At zero bias, only 20 percent of the depletion region length is to be in the p...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Can someone help solve this question step by step? Thanks! Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of Na = 2x1015/cm3 , and an n-side doping of Nd = 1015/cm3 . Compute (a) Built-in potential Vbi (b) Depletion region width W, and xp, xn (c) Maximum electric field at x=0 (d) Electrostatic potential V at x=0 (e) Make sketches of the charge density, electric field, and electrostatic potential as a function of position x
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi 2. Suppose you have a silicon wafer...
Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and an n- side silicon doped with 1.0E+15 cm-3 donors at room temperature (no donors in p-side and no acceptors in n-side). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c .Calculate the ratio, Xpo/Xno