Homework Answers
Bubbled one is PMOSFET and the
other one is NMOSFET and output voltage is taken at D as shown
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CMOS Inverters, VDD 1 8 V, capacitance C- 20fF, a. Find the of 1 GHz power...
Problem 1 A matched CMOS inverter fabricated in a process for which Cor 3.7 fFjum2, μnCz-180...
Problem 1 A matched CMOS inverter fabricated in a process for which Cor 3.7 fFjum2, μnCz-180 μ A/V2, tlpCor = 45 μA/V2. Itn--It,- = 3.3 V, uses W, 0.75 μrm and Ln-Lpー0.5,nn. The overlap capacitance and the effective drain-body capacitance per micrometer of gate width are 0.4 fF and 1.0 fF, respectively. The wiring capacitance is Cu2 fF. If the inverter is driving another identical inverter, find tPLH, tPH L, and tp. For how much additional capacitance load does the...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NM...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
a. Given a CMOS inverter has gate width Wn-20μm, channel length Lp-La- 2μm, process parameter Kp = 2.0x10-5A/V2, Kn = 5.0x10-5A/V2, find the value of (5 marks) the gate width Wp for Bp n b. Given...
a. Given a CMOS inverter has gate width Wn-20μm, channel length Lp-La- 2μm, process parameter Kp = 2.0x10-5A/V2, Kn = 5.0x10-5A/V2, find the value of (5 marks) the gate width Wp for Bp n b. Given that the sheet resistance of the polysilicon is 4.0d the capacitance per unit area of the polysilicon is 0.1fF/um2. Calculate the time constant of a polysilicon polygon with structure shown in the figure, width equals to 3A and the (6 marks) corner resistance is...
Design a CMOS gate implementing the function F = ((?*?)+?) (with a NOT over the whole...
Design a CMOS gate implementing the function F = ((?*?)+?) (with a NOT over the whole equation) . The channel length of all transistors is L=1μ and the output load capacitance is CL = 1pF. The width of all nMOSFETs is Wn and all pMOSFETs Wp. (a) Calculate Wn and Wp so that that the worst-case propagation delay times are tPHL = tPLH =1ns. Take VDD = 5V, VTN0 =1V, k’n = 60μA/V2, VTP0 = -1V, k’p = -25μA/V2. solution:...
CMOS Design Styles Quiz Problem 1: a) What is the typical "topology" for pMOS and nMOS...
CMOS Design Styles Quiz Problem 1: a) What is the typical "topology" for pMOS and nMOS in digital circuitry? -pMOS Vdd to Vout, nMOS Vout to Gnd -nMOS Vdd to Vout, pMOS Vout to Gnd -pMOS Vdd to Gnd, nMOS Vin to Vout -Only use xMOS -Both transistors Vin to Vout b) How do you implement nMOS in AND functions? -series connected, with increased widths -Parallel connected, with standard widths -Series connected with half the widths -Parallel connected, alternating large...
A 6T SRAM cell is fabrication in a 0.13-um CMOS process for which Vo ,-1.2 V , V-0.4 V , and μ.ca-430 μ AV . the inverters utilize (W/L-1 . Each of the bit lines has a 2-pf capacitance to ground...
A 6T SRAM cell is fabrication in a 0.13-um CMOS process for which Vo ,-1.2 V , V-0.4 V , and μ.ca-430 μ AV . the inverters utilize (W/L-1 . Each of the bit lines has a 2-pf capacitance to ground . The sense amplifier requires a minimum Of 0.2 V input reliable and fast operation (a) Find the upper bound on W/L for each of the access transistors so that Vo and Va do not change by more than...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF,...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF, and Vi 1.1 V. (For PSpice simulations, use parameters: VTO. 1.1 LAMBDA-002 KP-0.093 CGDO-4E-7 w=100u L-I00u for the 2N7000 MOSFET.) a. Determine the gain and gm of the circuit b. Determine the low-frequency (high-pass response) poles of the common-source amplifier due to the coupling...
Problem 1 A matched CMOS inverter fabricated in a process for which Cor 3.7 fFjum2, μnCz-180 μ A/V2, tlpCor = 45 μA/V2. Itn--It,- = 3.3 V, uses W, 0.75 μrm and Ln-Lpー0.5,nn. The overlap capacitance and the effective drain-body capacitance per micrometer of gate width are 0.4 fF and 1.0 fF, respectively. The wiring capacitance is Cu2 fF. If the inverter is driving another identical inverter, find tPLH, tPH L, and tp. For how much additional capacitance load does the...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
a. Given a CMOS inverter has gate width Wn-20μm, channel length Lp-La- 2μm, process parameter Kp = 2.0x10-5A/V2, Kn = 5.0x10-5A/V2, find the value of (5 marks) the gate width Wp for Bp n b. Given that the sheet resistance of the polysilicon is 4.0d the capacitance per unit area of the polysilicon is 0.1fF/um2. Calculate the time constant of a polysilicon polygon with structure shown in the figure, width equals to 3A and the (6 marks) corner resistance is...
A 6T SRAM cell is fabrication in a 0.13-um CMOS process for which Vo ,-1.2 V , V-0.4 V , and μ.ca-430 μ AV . the inverters utilize (W/L-1 . Each of the bit lines has a 2-pf capacitance to ground . The sense amplifier requires a minimum Of 0.2 V input reliable and fast operation (a) Find the upper bound on W/L for each of the access transistors so that Vo and Va do not change by more than...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF, and Vi 1.1 V. (For PSpice simulations, use parameters: VTO. 1.1 LAMBDA-002 KP-0.093 CGDO-4E-7 w=100u L-I00u for the 2N7000 MOSFET.) a. Determine the gain and gm of the circuit b. Determine the low-frequency (high-pass response) poles of the common-source amplifier due to the coupling...
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