A resistor is going to be formed out of silicon. It is doped with As to...
A resistor is going to be formed out of silicon. It is doped with As to 5x10^15 cm^-3. The cross sectional area of the device is 10^-5 cm^2 and it length is 5x10^-2 cm.
a. where is the fermi level located in this device?
b. Using the Fermi energy found in part a find the probability of a state being occupied by and electron at Ec.
c. If a 5 V potential is applied across the length of the device what will be the current in the device (hint: there is a formula for the resistance of the device based on the devices/material resistivity)
d. Now take this same device and counter dope it 2x10^16 cm^-3 of boron. What is the resistance of the device after it is counter doped, and the current through the device?
e. What is the drift velocity of the charge carriers in this device these two different situations.
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A resistor is going to be formed out of silicon. It is
doped with As to...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
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A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009...
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caculate the required donor density. assume that 1000cm2/Vs
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