b)
1. (3.35) For the transistor in the circuit in the circuit below, the parameters are Vin=0.5...
For the n-channel E-MOSFET transistor in the circuit, the parameters are VT N = 0.4 V, Kn = 120μA/V2. Determine VGS, ID, and VDS. Sketch the DC and AC load lines and plot the Q-point. Assume AC input is connected to the gate and output is connected to the drain. +5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
Problem Three An NMOS transistor has the following parameters and is being operated in the saturation region: Vin = 0.6 V and kn = 0.5 mA/V2 c) If Vas = 10 V, W/L = 20, VA = 100 V and Vps = 6 V, determine ro (note: there is more than one way to find this value). 16 = 0 19 + 9
1) For the following four FET circuits, the FET parameters are VTN 2.6Vand KN0.06 A/V2. For each circuit, the bias point (Q-point) is the same. A) Find for Vas Vos lo. In all cases, verify that the transistor is "on" and operating ina saturated region. B) On a single, Ip (y-axis) versus Vos (x-axis) plot, sketch the load line for each of the four circuits. Voo+20V Ro" 271 Ω R, 20 ka VoD+10V RG 10 kn RS-729 Ω VDO Voo...
show all the steps (35p) 5. For this single transistor amplifier, the transistor parameters are VI - 1V. Kn-Ima/v., and 1=0. VDD=5V, Rs - 1k, Rd = 4K, RI - 300K, R2 = 100K and RL=10K. Copyright The Companies, Inc Permission required for reproduction or display DD S ZBY V39 a) Construct DC equivalent circuit. Don't include any circuit elements if they are not necessary for DC analysis. b) Find the Ice and gm c) Where is the quiescent DC...
1. For the transistor circuit shown in figure 1, what is: a. Vce when VIN = OV? b. What minimum value of IB is required to saturate the transistor if Boc is 200? c. Calculate the maximum value of Rs when Vin = 5V. VCC 10V RC 1.0 K RB Q1 VIN=0V 15C02MH-TLE GND Figure
In the circuit in Figure P3.26, the transistor parameters are VTN = 0.8 V and Kn = 0.5 mA/V2. Calculate VGS, ID, and VDS.
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
2. (25 pts) For the JFET configuration shown below using the parameters given V +16.0v R1 RD Rp 2.4 k2 Rs 1.5 k R,- 2.1 M2 R2-270 kΩ Ioss 8.0 MA IG- 0 A C1 Vo Vin R2 RS cs a) Sketch the transfer characteristics of the device. b) On the same graph, sketch the bias line equation. c) Determine Ipo- d) Determine Voso- e) Determine Vos lpo Vas
For the amplifier configuration in Figure 4.1, the transistor parameters are; loss 10 mA, Vp 5 V and 0.01 V. The circuit parameters are; VDo 12 V, Rs 1.2 kn, Ri-265 k, R2 165 k, and RL-0.5 k [Bagi tatarajah penguat dalam Rajah 4.1, parameter transistor adalah; Inss 10 m, V- sV dan à-0.01 Parameter litar adalah; V 12 V, Rs 1.2 k R 265 R-165 k, dan R-0.5 ko VDD Rin R Ro Cc Cc2 RL R2 Rs +...
3. A circuit for an n-channel depletion MOSFET is shown in below. The transistor parameters are V 25 V and lpss - 10 mA. Calculate the quiescent values of ID, Vps, and VGS Assume R 1 MO, R2 = 60 k 2 and Rolk. -- + 18V < R, ΟΜΩ SND 3 R 3600k