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The (111) plane of silicon is shown above. Determine the number of atoms per square cm...
a)what is the distance between nearest neighbors in silicon? b)find the number of atoms per square centimeter in silicon in the (100),(110) and (111) planes?
Silicon atom density is 5x1022 cm-3, i.e., number of silicon atoms per cubic centimeter of silicon. Use your silicon crystal structure knowledge to prove it.
If 2.5 times 10^14 boron atoms per cm^3 are added to silicon as a substitutional impurity, determine what fraction of the silicon atoms are displaced in the lattice. The lattice constant of Si is 5.43 A. In the previous problem, estimate the average distance between the nearest impurity atoms. (Assume the boron atoms form a simple cubic lattice.)
Niobium (Nb) has the BCC crystal with a lattice parameter a 0.3294 nm. Find the planar concentrations as the number of atoms per nm2 of the (100), (110) and (111) planes. Which plane has the most concentration of atoms per unit area? Sometimes the number of atoms per unit area nsurface on the surface of a crystal is estimated by using the relation nsurface - nbulk2/3 where nbulk is the concentration of atoms in the bulk. Compare nsurface values with...
Consider the molecule BrF5 shown whose structure is shown below
(the four fluorine atoms forming a plane make a square).
3) Consider the molecule BrF5 shown whose structure is shown below (the four fluorine atoms forming a plane make a square) [18 marks] 168.9 pm84.8 Fi, 77.4 pm [Wikipedia e] i) what is the point group for this molecule? ii) draw the symmetry elements contained in the molecule iii) derive the 2x2 transformation matrix (mapping matrix) for the x and...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
Compute the planar density of atoms, in atoms per square centimetre, on a {100} plane of a defect free diamond cubic crystal, whose atoms have a radius of [R] nano-meters. R = 0.077 nm. av3 8R = 2R a= 4 13 (100)
A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm 3 An electric feld points from left to right. On an average, the free electrons in the silicon block (a) Move from left to right (b) Move from right to left (d) Do not move
Problem 5 (10 pts.) The square loop shown in the figure is in x-o plane. wire along the s-axis is carrying the current lane. The straight ro-5 sin(2nt × 105) A. If the resistance of the square loop is 10 Ohms, determine the magn of the current that would flow through the square loop. (Indicate t the direction on the square loop. -10 cm. I(t) 10 cm 5 cm
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...