An npn transistor has N'DE = 1020, N'AB = 5 x 1017, and N'DC = 1016. For VBE = 0.75 V, how small can the base width WBM be to keep the punch-through voltage above 12 V?
An npn transistor has N'DE = 1020, N'AB = 5 x 1017, and N'DC = 1016....
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...