Explain the origin of leakage current in a reverse-biased p-n junction.
Homework Answers
Leakage current occurs when the pn junction is reverse biased. On reverse bias, the width of the depletion region increases. Minority carriers are pushed through the depletion zone to the junction. This causes a small current to originate which is called the leakage current.
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Explain the origin of leakage current in a reverse-biased p-n
junction.
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of 0.25mA at room temperature of 25[]C and 0.05 mA at 100[c. The diode has forward biased constant current of 30A at room temperature. If forward biased current is assumed to remain constant at all temperatures. Calculate the junction internal barrier voltage at room temperature and at 1000C. take 1=1 The data sheet for a silicon diode specifies a forward voltage drop of 2.35V for...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 c...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 cim =10us 200 cm 2/Vs) In 700 cm2/(Vs) In = 1300 cm 2/(Vs - 450 cm/(Vs) The junction is forward biased by 0.5 V. What is the forward current? (b) What is the current at a reverse bias of-0.5 V?
Biased Si p-n...
Calculate the amplitude of current for a p-n junction at 2V forward biased potential. Assume saturation...
Calculate the amplitude of current for a p-n junction at 2V forward biased potential. Assume saturation current I 0 = 5x10 -10 A
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concent...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
How a p-n junction is formed? Explain in full detail indicating reverse bias and forward bias...
How a p-n junction is formed? Explain in full detail indicating reverse bias and forward bias conditions? Can you explain ?
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10-...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10- 12m and n-type material with resistivity of 4.6x10- Sam at room temperature. The lifetimes of the p- and n-materials are 100 us and 150 us respectively, and the junction area is 1.0 mm?.if Mp 4.8x102 m²/V.s „Mn = 0.135 m²/V.s and n; = 1.5x1016 carrier /m , calculate the reverse bias leakage current. Then calculate forward bias current if a 0.3 volt is applied.
2. True or false: a. Schottky barrier diodes typically have lower leakage current than p-n junction...
2. True or false: a. Schottky barrier diodes typically have lower leakage current than p-n junction diodes b. The semiconductor drift current is proportional to the magnitude of the electric field. c. The ideal subthreshold slope for a MOSFET increases with increasing temperature d. For a MOSFET the density of inversion-layer charge is QinrsonCx VGS VFB e. For a MOSFET the following equation is correct: on inversion -Raccumulation VGS-VFB f. For a BJT the following equation is correct: -- 1-a...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
a) Holes are injected across a forward biased p-n junction into n region that is much...
a) Holes are injected across a forward biased p-n junction into n region that is much longer than Lp, the hole diffusion length. Show by using the following equation, x-Xn Ph)Pho(e-1e that Lp, is the average length that a hole diffuses before it recombines in the n-region. (5)
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm3. Assume DB-25 cm2/s, TB-10-s and LB 16um (a) Calculate the values of no, рво, and nco. (b) For VEB 0.65V, determine the respective minority carrier concentration at the edge of the depletion layer, pa(0) and ne(0) (c) Sketch the minority carrier concentration through the device and label each curve (d)...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of 0.25mA at room temperature of 25[]C and 0.05 mA at 100[c. The diode has forward biased constant current of 30A at room temperature. If forward biased current is assumed to remain constant at all temperatures. Calculate the junction internal barrier voltage at room temperature and at 1000C. take 1=1 The data sheet for a silicon diode specifies a forward voltage drop of 2.35V for...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 cim =10us 200 cm 2/Vs) In 700 cm2/(Vs) In = 1300 cm 2/(Vs - 450 cm/(Vs) The junction is forward biased by 0.5 V. What is the forward current? (b) What is the current at a reverse bias of-0.5 V?
Biased Si p-n...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10- 12m and n-type material with resistivity of 4.6x10- Sam at room temperature. The lifetimes of the p- and n-materials are 100 us and 150 us respectively, and the junction area is 1.0 mm?.if Mp 4.8x102 m²/V.s „Mn = 0.135 m²/V.s and n; = 1.5x1016 carrier /m , calculate the reverse bias leakage current. Then calculate forward bias current if a 0.3 volt is applied.
2. True or false: a. Schottky barrier diodes typically have lower leakage current than p-n junction diodes b. The semiconductor drift current is proportional to the magnitude of the electric field. c. The ideal subthreshold slope for a MOSFET increases with increasing temperature d. For a MOSFET the density of inversion-layer charge is QinrsonCx VGS VFB e. For a MOSFET the following equation is correct: on inversion -Raccumulation VGS-VFB f. For a BJT the following equation is correct: -- 1-a...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
a) Holes are injected across a forward biased p-n junction into n region that is much longer than Lp, the hole diffusion length. Show by using the following equation, x-Xn Ph)Pho(e-1e that Lp, is the average length that a hole diffuses before it recombines in the n-region. (5)
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm3. Assume DB-25 cm2/s, TB-10-s and LB 16um (a) Calculate the values of no, рво, and nco. (b) For VEB 0.65V, determine the respective minority carrier concentration at the edge of the depletion layer, pa(0) and ne(0) (c) Sketch the minority carrier concentration through the device and label each curve (d)...
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