A n-type silicon crystal has 10^16 cm-3 of doping impurities. At equilibrium and at room temperature (T = 300 K) what the electron and hole concentrations. Indicate which constitutes the majority carriers
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A n-type silicon crystal has 10^16 cm-3 of doping impurities. At equilibrium and at room temperature...
For n-type silicon at room temperature, with a donor doping concentration of 10^(17) cm^(-3), approximately how much larger will be the electron concentration, compared to the hole concentration? Assuming ni=10^(10) cm^(-3).
The compensated n-type silicon at 300 K has a conductivity: 16 (ohm-cm)-1 and an acceptor doping concentration: 1017 cm-3. a) Express the mobility as a function of the doping concentration. b) Calculate the mobility and conductivity when Nd=2 1017 cm-3.
16 Consider a Si crystal at room temperature doped with 2.25 x 10 Icm As toms. As has atomic number 33. What is the doping type? Find the equilibrium hole concentration. (max 6 points) Ans.
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of 2.5x10^16/cm3. Assume that all the silicon atoms displace only P atoms in the InP crystal. This is an example of “amphoteric” doping. (a) Explain amphoteric doping, and why it is important I specify which type of atoms in an InP crystal is replaced by the Si atoms that are used for doping. (b) In this situation, state if the doped InP is n-type or...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
A silicon p-n junction is made by doping the p and n sides with doping density of Na=3E15 cm and Nd=2E18 cm". At T=300 K in equilibrium find: e) Draw the energy diagram inclusive of Xn, Xp, energy and fermi levels