Design a common emitter amplifier of nominal gain g = −10 to work at f = 100 kHz. Let the supply voltages VCC = ±12 V. Center the output voltage as best you can. Use capacitive coupling and set the quiescent current at 1.0 mA.
Design a common emitter amplifier of nominal gain g = −10 to work at f =...
Design a common emitter (voltage amp) PNP amplifier with a voltage gain of 25, VCC = +15 V, and IC = 0.25 mA. Bias the collector at 0.5VCC. (Coupling capacitor selection is optional.)
Figure 4. (a) 1. Design the common-emitter amplifier in Fig. 4(a) with the following specifications: Supply Voltage, Vcc 0-to-Peak Output Swing, V Voltage Gain, A. Input Resistance, R Output Resistance, Ro THD for 5kHz 1 V (0-to-peak) Sine Wave Output Voltage, V Relative Variation of Ic for VBE 0.7t 0.1V Transistor's Current Gain, β 5V 25 1.8kS2 4% 10% 100 Show your design procedure and all your calculations. Your design should be insensitive to B variations. Vcc RB1 Rc 0...
We design a voltage amplifier using a BJT following the plan laid down in the handout "Notes on common emitter transistor amplifier 8 IN RB Design an amplifier with a Gain VoutVinl30 Assume the transistor gain is B 100. Let Vcc 15 V Choose VCE Vcc-VCE.Sat Choose Ic.o-10 mA. 1. Determine values of resistors Rc, RE, and RB so that the gain is essentially independent of the value of β 2. State and satisfy the load-line relation between lc.a and...
You are required to design a 2-stage voltage amplifier (find values for RE, RC1, RC2) to meet the following criteria: an input resistance of 400 kΩ and an overall voltage gain equal to or greater than 250, with a resistor output load, RL. Use a common-emitter with emitter degradation (RE) stage for the input, followed by a commonemitter amplifier with bias current equal to 0.5 mA. (VCC = 20 V, βo = 200 and the DC levels of the first...
Perform a simple initial design of an ac coupled common-emitter amplifier with four resistor biasing and emitter by-pass capacitor, to have a voltage gain of about 100, for the following conditions. Justify any approximations used. (Assume Ic=1/300 A) i)Transistor ac common-emitter gain, B, 100 ii) Supply voltage ofV0c-20V iii) Allow 10% Vcc across RE DC collector voltage of 10 V iv) v) DC current in the base bias resistors should be ten times greater than the DC base current. Assume...
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and open circuit gain First, design a common emitter BJT amplifier Second, analyze the amplifier.( Avo, Gv, Rin, Rout) Third, compare your calculation with Multisim. Report must include comparison between your calculation & simulation results overall voltage gain, open circuit voltage gain, input resistance, and output resistance. This design project is not group work, must be done individually. Type your report. Design a discrete common emitter BJT amplifier.(Determine...
Common-emitter amplifier? (10 pts) Consider a common-emitter amplifier with emitter resistor shown below. DC voltage sources VBB and Vcc bias the transistor at lc-1mA. Let β-100. Determine the overall voltage gain Gv 2. VCC 10 k2 Vsig VBB (10 pts) Consider a common-emitter amplifier with emitter resistor shown below. DC voltage sources VBB and Vcc bias the transistor at lc-1mA. Let β-100. Determine the overall voltage gain Gv 2. VCC 10 k2 Vsig VBB
Shown below is a single stage common emitter amplifier with a unipolar dc power supply using an 2N3904 NPN BJT as the active device. It is specified that V+ 40 V, C1 C2CE 100uF, Ro-7.5 k2, REi-5.1kS2, and Ri - 36k52. Design the circuit so that the dc collector current is 2 mA and the magnitude of the small-signal midband voltage gain is 32.3. For the design calculations assume that the base-to- emitter dc voltage drop is 0.65 V, the...
Can I get help with part g through part r, please? Given the following Common-Emitter Amplifier with Voltage-Divider Bias: The transistor is a Silicon device with B160 (Beta 160) and transistor r.= 30 kn: 20 V 34.7k LAL = Vou 35.10 31.1k LRE $3900 03 - Find the following quantities in parts a through where means Quiescent DC): a) Thevenin Voltage and Thevenin Resistance Re b) Base Current la Collector Current le d) Emitter Current le e) Transistor Collector-Emitter Quiescent...
8. Design the DC bias circuit of a voltage-divider biased common-emitter amplifier (12 points) with the specification given below. Center Q-point, Vcc- 16V, Ico-2.2mA.