Explain the contact potential. Use this to further explain why one expects to see pulses from a silicon diode detectors even when the bias voltage is not applied.
The contact potential, Δφ (measured in unit of energy, eV), is one of the most important parameters for understanding tip-induced band bending and tunneling spectroscopy. It is defined as the work function of the metallic tip, φm, minus that of the semiconducting sample, φs, where for the sample its work function is given by the electron affinity, χ, plus the difference in energy between the conduction band maximum and the Fermi-level, EC-EF. For the contact potential used throughout the SEMITIP program,
The contact potential, Δφ (measured in unit of energy, eV), is one of the most important parameters for understanding tip-induced band bending and tunneling spectroscopy. It is defined as the work function of the metallic tip, φm, minus that of the semiconducting sample, φs, where for the sample its work function is given by the electron affinity, χ, plus the difference in energy between the conduction band maximum and the Fermi-level, EC-EF. For the contact potential used throughout the SEMITIP program,
Most silicon particle detectors work, inprinciple, by doping narrow (usually around 100 micrometers wide) strips of silicon to turn them into diodes, which are then reverse biased. As charged particles pass through these strips, they cause small ionization currents that can be detected and measured.
Explain the contact potential. Use this to further explain why one expects to see pulses from...
3 A. Define Built in Potential in a PN Junction. With the help of diagrams explain how the built in potential is formed when no external bias is applied [2 marks] B. A rectifier circuit with four silicon diodes and the output frequency equal to twice of the input frequency. The input peak to peak voltage Vin pp = 25V, the load resistance R = 560 12. [3 marks) a. Name the circuit b. Draw the circuit diagram c. Explain...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
.1. Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide. 2. Determine the thermal voltage for a diode at a temperature of 20°C. 3. Given a diode current of 6 mA, Vr= 26 mV, n= 1, and Is= 1 nA, find the applied voltage VD. 4. Compare the characteristics of a silicon and a germanium diode and determine which you would prefer to use...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
Explain why we use the overall cost of capital for investment decisions even when only one source of capital will be used?
As a manager of an organization, what probability distribution from this week would you use if you wanted to study one aspect of your annual employee turnover? Explain why you would use the probability distribution to study the chosen aspect of employee turnover. In your post, be sure to identify the statistical formulas specifically and what additional data you would need to understand the chosen aspect of employee turnover. For example, some aspects of employee turnovers are employee age, years...
2. (60 pts) Consider a one-sided silicon PN diode. The p-side is degenerately doped (and you can assume Ep = Ey for simplicity). The doping concentration on the n-side is Np for 0<x <too. The depletion width on the n-side is xn. Use the depletion approximation. p* ND x 0 From here, you assume that Np is given by 4x1015 cm. (h) (7 pts) What is the maximum electric field in depletion region when Va=-3 V? (i) (8 pts) As...
Question 4. (a) A full-wave bridge rectifier power supply is powered from the secondary of a transformer which has a rms secondary voltage of 15.6V. The primary of the transformer is connected to a 50Hz, 230VRMS power supply. A 2700uF filter capacitor is used. A current of 1.5 Amp is drawn from the supply. (i) Sketch a schematic diagram of the setup. (ii) Calculate the mean de output voltage. Assume each power diode has a forward voltage drop of 1...
(6) A blue LED with a forward voltage drop of 3.5V is to be energized from a 12 volt battery. To light the blue LED to ful brightness requires a current of 20 mA through the LED. The blue LED has a peak inverse voltage rating of 5 V. i) Draw the circuit dingram of the arrangement you will use to light the LED to full brightness. (ii What is the value of the resistor you will use in your...
Why do we use the overall cost of capital for investment decisions even when only one source of capital will be used (e.g., debt)? Suppose a firm estimates its weighted average cost of capital (WACC) to be 10%. Should the WACC be used to evaluate all of its potential projects, even if they vary in risk? If not, what might be “reasonable” costs of capital for average, high and low-risk projects?