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Width (Wbv) = 4 x 10-0.5
Applied Voltage (Vbv) = 24 volt
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(20 points) A Si junction does not go into breakdown until the electric field reaches 6x 10* V/cm...
7. a) A Si p-n junction has dopant concentrations Na = 2 x 1016/cm3 and Nd=1x1015/cm3 at T=300 K. Calculate (a) Vo, (b) W at VR=0 and VR=2 V and (c) the maximum electric field in the space charge regi...
7. a) A Si p-n junction has dopant concentrations Na = 2 x 1016/cm3 and Nd=1x1015/cm3 at T=300 K. Calculate (a) Vo, (b) W at VR=0 and VR=2 V and (c) the maximum electric field in the space charge region at VR=0 and VR=4 V. b) For the junction in part a, how much would the temperature need to increase to have V0 decrease by 1%?
Problem1 10" ㎝aandn-side Callibrium at 3000 K has ap side dup ing of NA-2 doping of ND-101 cm Ca...
Problem1 10" ㎝aandn-side Callibrium at 3000 K has ap side dup ing of NA-2 doping of ND-101 cm Calculate: (a) The contact potential (also called built-in voltage) (b) The depletion layer width at the p-side and n-sides, and the total depletion layer width. (c) The electric field at the metallurgical junction. (d) The potential at the metallurgical junction. (e) Make sketches of the charge density, electric field and electrostatic potential as a function of position, that are roughly to scale....
The doping and geometric parameters of a P–N junction diode are: - ND = 10^20 cm−3,...
The doping and geometric parameters of a P–N junction diode are: - ND = 10^20 cm−3, Wcathode = 1 μm <<Lp, - NA = 5 × 10^15 cm−3, Wanode = 10 μm <<Ln, - Junction area AJ = 500 × 500 μm2. Calculate the reverse biasing current IS, and then use this result to obtain the forward voltage that corresponds to a current of 100 mA, if the semiconductor material is: (a) Si (μn = 1450 cm2/V · s, μp...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
4.1* An abrupt silicon pn junction has dopant con- centrations of Na = 1 1015 cm-3...
4.1* An abrupt silicon pn junction has dopant con- centrations of Na = 1 1015 cm-3 and Na = 2 x 107 cm3. (a) Evaluate the built-in potential d; at room tem- perature. (b) Using the depletion approximation, calculate the width of the space-charge layer and the peak electric field for junction voltages Ve equal to 0 V and -10 V.
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a)...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a) What breakdown mechanism do you expect will be dominant in this device? Explain. b) Find the approximate breakdown voltage for this diode. c) Calculate the depletion width at the breakdown voltage. d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?
1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on t...
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1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on the n-side. The minority carier recombination times are fe-490 ns for and 109 electrons in the 1350 cm Vs, and with Nd-10 cm and A,s 65 cm ,The cross-sectional area is 1.5 mm. Assume this is a long diode, please calculate the current, I, hrough the diode at room temperature when the voltage, V, acoss it is 0.25 2.5...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on t...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a)...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
Problem1 10" ㎝aandn-side Callibrium at 3000 K has ap side dup ing of NA-2 doping of ND-101 cm Calculate: (a) The contact potential (also called built-in voltage) (b) The depletion layer width at the p-side and n-sides, and the total depletion layer width. (c) The electric field at the metallurgical junction. (d) The potential at the metallurgical junction. (e) Make sketches of the charge density, electric field and electrostatic potential as a function of position, that are roughly to scale....
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
4.1* An abrupt silicon pn junction has dopant con- centrations of Na = 1 1015 cm-3 and Na = 2 x 107 cm3. (a) Evaluate the built-in potential d; at room tem- perature. (b) Using the depletion approximation, calculate the width of the space-charge layer and the peak electric field for junction voltages Ve equal to 0 V and -10 V.
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1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on the n-side. The minority carier recombination times are fe-490 ns for and 109 electrons in the 1350 cm Vs, and with Nd-10 cm and A,s 65 cm ,The cross-sectional area is 1.5 mm. Assume this is a long diode, please calculate the current, I, hrough the diode at room temperature when the voltage, V, acoss it is 0.25 2.5...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
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