Consider a modern PMOS capacitor with an Pt gate[1](ΦM= 5.1 eV) and n-type silicon substrate (ND= 1018cm-3). (a) The des...

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Consider a modern PMOS capacitor with an Pt gate[1](ΦM= 5.1 eV) and n-type silicon substrate (ND= 1018cm-3). (a) The des...

Consider a modern PMOS capacitor with an Pt gate[1](Φ_M= 5.1 eV) and n-type silicon substrate (N_D= 10¹⁸cm^-3).

(a) The desired oxide capacitance is 2.5 µF/cm². Calculate the SiO₂thickness and the HfO₂thickness that can enable this capacitance. If the thickness of a monolayer of SiO₂is 3.5 Å, how many monolayers is that? What is the advantage of using HfO₂?

(b) Calculate the substrate work function and the flatband voltage of the capacitor.

Now qualitatively (but carefully) sketch the band diagrams under the following conditions. Assuming the substrate is grounded, please label the voltage applied on the gate, and its sign, in each case.

(c) thermal equilibrium

(d) electron accumulation

(e) strong inversion.

engineering Electrical-Engineering

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Answer 1

Answer #1

a) period 2TIX20 T. 20 5 5 니 2 0 2 Peviodic 시gnao, 20 5 LCM, ) HCF C20,5) 5)10 (4 Time penod (b) Fourier Sercsom TI 寸Je

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Answer 2

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Consider a modern PMOS capacitor with an Pt gate[1](ΦM= 5.1 eV) and n-type silicon substrate (ND= 1018cm-3). (a) The des...

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Consider a modern PMOS capacitor with an Pt gate[1](ΦM= 5.1 eV) and n-type silicon substrate (ND= 1018cm-3). (a) The des...

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Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total n...

Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10°...

A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and...

Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total...

Consider a modern PMOS capacitor with an Pt gate[1](ΦM= 5.1 eV) and n-type silicon substrate (ND= 1018cm-3). (a) The des...

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Add Answer to: Consider a modern PMOS capacitor with an Pt gate[1](ΦM= 5.1 eV) and n-type silicon substrate (ND= 1018cm-3). (a) The des...

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Consider a modern PMOS capacitor with an Pt gate[1](ΦM= 5.1 eV) and n-type silicon substrate (ND= 1018cm-3). (a) The des...