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Question 26 Ip) of all transistors in the circuit. You may ignore the influence of channel-length modulation and...
find V1, V2, and V3, neglecting channel length modulation. both transistors are identical kn = 0.52...
find V1, V2, and V3, neglecting channel length modulation. both
transistors are identical
kn = 0.52 mA/V^2
Vt = 0.77 V
4.2 V 4.2 V 19k 19k V2 V M1 M2 oV + 100 MA -4.2 V
1-Clear handwriting 2-Correct answer 3-Organized 4-answer all the questions Please Problem 2 On the circuit on...
1-Clear handwriting
2-Correct answer
3-Organized
4-answer all the questions
Please
Problem 2 On the circuit on Figure P2, transi stor Q1 has a threshold voltage of Vt = 2 V and a transconductance parameter of k = 100 mA/V2. Note that Vcc = -Vee = 4.5 V. Moreover, capacitors C1, C2, and C3 can be assumed to be very large VDD 4.5.0 R3 25kQ R1 300kn C2 Vout C1 Rsig Q1 1k0 R2 200kn Vsig (R4 2kQ C3 -4.5V VSS...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 k...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
The following circuit is used for questions Q5 through Q8. Assume all transistors are in forward...
The following circuit is used for questions Q5 through Q8. Assume all transistors are in forward active mode. Suppose that B = 100 for each transistor and that VBE = 0.7 V for each transistor while in forward active mode. Suppose that VT = 0.025 mV. Ignore r, throughout the next four questions pertaining to this circuit. +20 V +20 V +20 V 10 kl 50 k 2 Im +20 V Rout - 1.2 kr} Zur 32018 3892 Fig.2 Q.6...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
December 2013 Elec-B5, Advanced Electronics QUESTION (1) In the following circuits, assume all transistors have the following parameters: K 0.5 mA/V2, VT,-1 V and λ-0.02. Given: 1M bias I mA M M2...
December 2013 Elec-B5, Advanced Electronics QUESTION (1) In the following circuits, assume all transistors have the following parameters: K 0.5 mA/V2, VT,-1 V and λ-0.02. Given: 1M bias I mA M M2 꼬 + 2 고 (~ 2 a) Estimate the differential gain vourlVIN in (V/V) b) Find the common mode input resistance Ricm c) Find the common mode input range. d) Estimate the common mode rejection ratio, CMRR. Express your result in dB. Useful formulae: for n-channel MOSFET (6...
Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier....
Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier. Notice the absence of a source resistor Rsig and load resistor R. If we know how the present amplifier (the one on Figure P3a) behaves without Rsig and RL, we can infer its behaviors if Rsig and R were to be added. design the amplifier circuit on Figure P3a, i.e., you have to find appropriate values for RGj You are to RG,, RD, and...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region o...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
find V1, V2, and V3, neglecting channel length modulation. both
transistors are identical
kn = 0.52 mA/V^2
Vt = 0.77 V
4.2 V 4.2 V 19k 19k V2 V M1 M2 oV + 100 MA -4.2 V
1-Clear handwriting
2-Correct answer
3-Organized
4-answer all the questions
Please
Problem 2 On the circuit on Figure P2, transi stor Q1 has a threshold voltage of Vt = 2 V and a transconductance parameter of k = 100 mA/V2. Note that Vcc = -Vee = 4.5 V. Moreover, capacitors C1, C2, and C3 can be assumed to be very large VDD 4.5.0 R3 25kQ R1 300kn C2 Vout C1 Rsig Q1 1k0 R2 200kn Vsig (R4 2kQ C3 -4.5V VSS...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
The following circuit is used for questions Q5 through Q8. Assume all transistors are in forward active mode. Suppose that B = 100 for each transistor and that VBE = 0.7 V for each transistor while in forward active mode. Suppose that VT = 0.025 mV. Ignore r, throughout the next four questions pertaining to this circuit. +20 V +20 V +20 V 10 kl 50 k 2 Im +20 V Rout - 1.2 kr} Zur 32018 3892 Fig.2 Q.6...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
December 2013 Elec-B5, Advanced Electronics QUESTION (1) In the following circuits, assume all transistors have the following parameters: K 0.5 mA/V2, VT,-1 V and λ-0.02. Given: 1M bias I mA M M2 꼬 + 2 고 (~ 2 a) Estimate the differential gain vourlVIN in (V/V) b) Find the common mode input resistance Ricm c) Find the common mode input range. d) Estimate the common mode rejection ratio, CMRR. Express your result in dB. Useful formulae: for n-channel MOSFET (6...
Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier. Notice the absence of a source resistor Rsig and load resistor R. If we know how the present amplifier (the one on Figure P3a) behaves without Rsig and RL, we can infer its behaviors if Rsig and R were to be added. design the amplifier circuit on Figure P3a, i.e., you have to find appropriate values for RGj You are to RG,, RD, and...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
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