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6.28. Assuming a constant VDS, a graph of gmro verses (VGs slope of 50 V-1. Find...
An NMOS transistor with parameters VTh=1 V, k’=100 uA/V2 , W = 10 um, and L=1...
An NMOS transistor with parameters VTh=1 V, k’=100 uA/V2 , W = 10 um, and L=1 um has a VGS=2 V. Find the drain current when: a. VDS=0.5 V b. VDS=2 V c. VDS=3 V Answers: a) 374 uA b) 0.5 mA c) 0.5 mA please show your work :)
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is...
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is specified to have Cox 8.6 fF/um2, Hn = 450 cm2/V s, and Vin 0.5 V. a) Find VGs and VDs that result in the MOSFET operating at the edge of saturation with ID 100 uA. b) If VGs is kept constant, find Ip when VDs is reduced to 0.06 V
4 x 106-__ Vds (cm/s) 0 1.25 as (V)- Figure P11.13 I Figure for Problems l 1·13 and 1 1 . 14. Pro...
4 x 106-__ Vds (cm/s) 0 1.25 as (V)- Figure P11.13 I Figure for Problems l 1·13 and 1 1 . 14. Problems 11.14 Consider an NMOS transistor with a threshold voltage of VTN-0.4 V. Plot, on the same graph, Vps(sat) over the range 0s VGs 3 V for (a) an ideal MOSFET (constant mobility) and (b) a device whose drift velocity is given in Figure P11.13.
4 x 106-__ Vds (cm/s) 0 1.25 as (V)- Figure P11.13 I Figure...
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a...
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a circuit as shown in Fig 1. b. You will need to design the circuit such that Ip = 1 (mA), VG = 0 [V], and Vp = 5 [V]. (determine values for R1, R2, Rp, and Rs) 1 W ID = 5 unCox (Vgs - Vrh)2 = K (Vgs - VTH)2 c. Use Vpp = 15 [V], Vs = -15 [V], and 2N7000 for...
Problem 4 (15 points) A particular MOSFET for which Ven = 0.5 V and k',(W/L) -...
Problem 4 (15 points) A particular MOSFET for which Ven = 0.5 V and k',(W/L) - 1.6 mA/V2 is to be operated in the saturation region. If ip is to be 50 uА, find the required vgs and the minimum required Ups. Repeat for ip = 200 MA.
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
2. Square-law theory of the MOSFET Biases VGs 3 V and Vbs 0 V are applied to an ideal n-channel MOSFET with W 70 um, L-7m, An 550 cm2/V.s, tox 50 nm, and V 1 V. Making use of the square-lavw theo...
2. Square-law theory of the MOSFET Biases VGs 3 V and Vbs 0 V are applied to an ideal n-channel MOSFET with W 70 um, L-7m, An 550 cm2/V.s, tox 50 nm, and V 1 V. Making use of the square-lavw theory, (a) determine the inversion layer charge/cm, at the midpoint 0, = L/2) of the channel. (b) determine the drain conductance (gd dip/dvps) at the specified bias point. Repeat the above calculation for Vas3 V and VDs 3 V....
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25,...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V,...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
This NMOS transistor has Vt=1 V and (1/2)kn'(W/L)=1 mA/V^2. Find the operating mode (cutoff, triode, or...
This NMOS transistor has Vt=1 V and (1/2)kn'(W/L)=1
mA/V^2. Find the operating mode (cutoff, triode, or saturation) and
values for Vg, Id, Vd, and Vs.
49v Up Va (K
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is specified to have Cox 8.6 fF/um2, Hn = 450 cm2/V s, and Vin 0.5 V. a) Find VGs and VDs that result in the MOSFET operating at the edge of saturation with ID 100 uA. b) If VGs is kept constant, find Ip when VDs is reduced to 0.06 V
4 x 106-__ Vds (cm/s) 0 1.25 as (V)- Figure P11.13 I Figure for Problems l 1·13 and 1 1 . 14. Problems 11.14 Consider an NMOS transistor with a threshold voltage of VTN-0.4 V. Plot, on the same graph, Vps(sat) over the range 0s VGs 3 V for (a) an ideal MOSFET (constant mobility) and (b) a device whose drift velocity is given in Figure P11.13.
4 x 106-__ Vds (cm/s) 0 1.25 as (V)- Figure P11.13 I Figure...
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a circuit as shown in Fig 1. b. You will need to design the circuit such that Ip = 1 (mA), VG = 0 [V], and Vp = 5 [V]. (determine values for R1, R2, Rp, and Rs) 1 W ID = 5 unCox (Vgs - Vrh)2 = K (Vgs - VTH)2 c. Use Vpp = 15 [V], Vs = -15 [V], and 2N7000 for...
Problem 4 (15 points) A particular MOSFET for which Ven = 0.5 V and k',(W/L) - 1.6 mA/V2 is to be operated in the saturation region. If ip is to be 50 uА, find the required vgs and the minimum required Ups. Repeat for ip = 200 MA.
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
2. Square-law theory of the MOSFET Biases VGs 3 V and Vbs 0 V are applied to an ideal n-channel MOSFET with W 70 um, L-7m, An 550 cm2/V.s, tox 50 nm, and V 1 V. Making use of the square-lavw theory, (a) determine the inversion layer charge/cm, at the midpoint 0, = L/2) of the channel. (b) determine the drain conductance (gd dip/dvps) at the specified bias point. Repeat the above calculation for Vas3 V and VDs 3 V....
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
This NMOS transistor has Vt=1 V and (1/2)kn'(W/L)=1
mA/V^2. Find the operating mode (cutoff, triode, or saturation) and
values for Vg, Id, Vd, and Vs.
49v Up Va (K
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