CONSTRUCT THE SMALL SIGNAL MODEL OF EACH CIRCUIT IF ALL OF THE
TRANSISTORS OPERATE IN SATURATION AND 
(c) (d) Figure 6.55 Vin VDD T VinaHM Vh M Rs Vout Vout R1 Vout M2 MRD RD (c) (b) (a) VDD VDD R2 o Vout Vin M1 VintM Vout M2 R R1 WHM2 (e) (d) Fiqure 6.56 M W
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CONSTRUCT THE SMALL SIGNAL MODEL OF EACH CIRCUIT IF ALL OF THE
TRANSISTORS OPERATE IN SATURATION...
PROBLEM 4 (20 pts) IMPORTANT: Assume all transistors are in saturation. a) Find the small-signal DC...
PROBLEM 4 (20 pts) IMPORTANT: Assume all transistors are in saturation. a) Find the small-signal DC gain of the amplifier circuit when the small-signal voltage ViN is applied to the gate of M1. Ignore the body effect for M1 and M2. b) Find the small-signal DC gain of the amplifier circuit when the small-signal voltage Vin is applied to the body of M1. In this case, a DC bias voltage (VB) is applied to the gate of M1. Ignore the...
3. Consider the circuit in the Problem #2 again. Assume all transistors are in saturation and...
3. Consider the circuit in the Problem #2 again. Assume all transistors are in saturation and Vdd is sufficiently high to keep all transistors in saturation. Assume k, '=100 JAV, k,'= 50 A/V", Vsar = 300mV, n = 0.04, and the DC bias current I1 = 50uA. Also assume all the transistors have the same W/L = 10) except for M3, M6, M7, and M16. M3 is twice as wide, whereas M16 is a quarter (0.25) as wide as the...
2. For the amplifiers below, not all the bias details are shown. For the circuit on the left, what is the small signal...
2. For the amplifiers below, not all the bias details are shown. For the circuit on the left, what is the small signal resistance looking into the a. source of M2 (Ri2)? b. Using part a, Find the voltage gain at the drain of Mi, and the total gain at the output. For the circuit on the right, known as a cascode amplifier, find the voltage gain. c. Express your answers in terms of the transistors gm, and RD. Assume...
Draw the dc equivalent circuit and find the Q-point for the amplifier in Fig. Assume Kp...
Draw the dc equivalent circuit and find the Q-point for the amplifier in Fig. Assume Kp = 400 UA/V2, VTP =-1 V, VDD = 15 V, R1 = 3.3 M2, R2 = 3.3 MO, RD = 24 k1, and R4 = 22 kN. Figure 00W w WM w ΚΩ 7 M R 470k
3-F) b. Vout = 0.99 Vin 3-E) For the following circuit, with Ri 18 k2, R2...
3-F) b. Vout = 0.99 Vin
3-E) For the following circuit, with Ri 18 k2, R2 15 k(2, R6 = 40 kQ, V,-10 V, and V,-7 V, find: 22 k2, R 30 k2, R4 20 kQ, Rs- a) the current through Ri, R3, & R6 b) the voltage across R2, R4, & Rs Rs V, 3-F) For the following circuit, what is Vout in terms of Vin for each case? a) R1-100 ?, R2-1 k(2, and R3 = 1.0 M(2...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 k...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
Question 26 Ip) of all transistors in the circuit. You may ignore the influence of channel-length modulation and...
Question 26 Ip) of all transistors in the circuit. You may ignore the influence of channel-length modulation and body effect in your bias calculations Consider the circuit shown in Figure 7. Determine the bias point (VGs, Vps, VDD R R IREF VOUT VCM-n 2 VCM 2 Q3 VDD 5 V VCM 2 V Vt 0.5 V kn1 8 mA/V2 kn2 16 mAV2 kn3 kn4 = 8 mA/V2 1 R 3 kn IREF = 1 mA Fig. 7 Select the correct...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
An n-channel enhancement-mode MOSFET is as shown in figure. VDD = 15V ; K = 0.3...
An n-channel enhancement-mode MOSFET is as shown in figure.
VDD = 15V ; K = 0.3 mA/V ; Vt =
3V. Also given: R1 = 5.6 Mega-ohms ;
R2 = 5 Mega-ohms ; RD = 2.8 K-ohms ;
RS = 1.2 K-ohms
Find the following quantities:
a.) in mA
b.) in V
c.) in V
d.) Choose the correct operating region from the following:
Ohmic Region, Cutoff Region, or Saturation Region?
O VOD р а и - - We were unable...
8.38. For Fig. 8.63, analyze the functionality of circuit and derive expression for Vout. 2. For...
8.38. For Fig. 8.63, analyze the functionality of circuit and
derive expression for Vout.
2. For Fig.8.66(a cir- for the input cuit and verify its function mathematically.the current mior a func- 8.37.For AA.S Vin2 oltage 2 k wollol od M1 C MoHomout + Vin1 C OT + Wcg ab sub vo taum coo o ni TOTI9 9283-1210w ort nbFigure 8.62 or bns .0 wolod nism TIT smon&i 8.38. For Fig. 8.63, analyze the functionality of mcircuit and derive expression for...
PROBLEM 4 (20 pts) IMPORTANT: Assume all transistors are in saturation. a) Find the small-signal DC gain of the amplifier circuit when the small-signal voltage ViN is applied to the gate of M1. Ignore the body effect for M1 and M2. b) Find the small-signal DC gain of the amplifier circuit when the small-signal voltage Vin is applied to the body of M1. In this case, a DC bias voltage (VB) is applied to the gate of M1. Ignore the...
3. Consider the circuit in the Problem #2 again. Assume all transistors are in saturation and Vdd is sufficiently high to keep all transistors in saturation. Assume k, '=100 JAV, k,'= 50 A/V", Vsar = 300mV, n = 0.04, and the DC bias current I1 = 50uA. Also assume all the transistors have the same W/L = 10) except for M3, M6, M7, and M16. M3 is twice as wide, whereas M16 is a quarter (0.25) as wide as the...
2. For the amplifiers below, not all the bias details are shown. For the circuit on the left, what is the small signal resistance looking into the a. source of M2 (Ri2)? b. Using part a, Find the voltage gain at the drain of Mi, and the total gain at the output. For the circuit on the right, known as a cascode amplifier, find the voltage gain. c. Express your answers in terms of the transistors gm, and RD. Assume...
Draw the dc equivalent circuit and find the Q-point for the amplifier in Fig. Assume Kp = 400 UA/V2, VTP =-1 V, VDD = 15 V, R1 = 3.3 M2, R2 = 3.3 MO, RD = 24 k1, and R4 = 22 kN. Figure 00W w WM w ΚΩ 7 M R 470k
3-F) b. Vout = 0.99 Vin
3-E) For the following circuit, with Ri 18 k2, R2 15 k(2, R6 = 40 kQ, V,-10 V, and V,-7 V, find: 22 k2, R 30 k2, R4 20 kQ, Rs- a) the current through Ri, R3, & R6 b) the voltage across R2, R4, & Rs Rs V, 3-F) For the following circuit, what is Vout in terms of Vin for each case? a) R1-100 ?, R2-1 k(2, and R3 = 1.0 M(2...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
Question 26 Ip) of all transistors in the circuit. You may ignore the influence of channel-length modulation and body effect in your bias calculations Consider the circuit shown in Figure 7. Determine the bias point (VGs, Vps, VDD R R IREF VOUT VCM-n 2 VCM 2 Q3 VDD 5 V VCM 2 V Vt 0.5 V kn1 8 mA/V2 kn2 16 mAV2 kn3 kn4 = 8 mA/V2 1 R 3 kn IREF = 1 mA Fig. 7 Select the correct...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
An n-channel enhancement-mode MOSFET is as shown in figure.
VDD = 15V ; K = 0.3 mA/V ; Vt =
3V. Also given: R1 = 5.6 Mega-ohms ;
R2 = 5 Mega-ohms ; RD = 2.8 K-ohms ;
RS = 1.2 K-ohms
Find the following quantities:
a.) in mA
b.) in V
c.) in V
d.) Choose the correct operating region from the following:
Ohmic Region, Cutoff Region, or Saturation Region?
O VOD р а и - - We were unable...
8.38. For Fig. 8.63, analyze the functionality of circuit and
derive expression for Vout.
2. For Fig.8.66(a cir- for the input cuit and verify its function mathematically.the current mior a func- 8.37.For AA.S Vin2 oltage 2 k wollol od M1 C MoHomout + Vin1 C OT + Wcg ab sub vo taum coo o ni TOTI9 9283-1210w ort nbFigure 8.62 or bns .0 wolod nism TIT smon&i 8.38. For Fig. 8.63, analyze the functionality of mcircuit and derive expression for...
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