An nMOS transistor has a threshold voltage of 0.4 V and a supply voltage of VDD = 1.2 V. A circuit designer is evaluating a proposal to reduce Vt by 100 mV to obtain faster transistors.
a) By what factor would the saturation current increase (at Vgs = Vds = VDD) if the transistor were ideal?
b) By what factor would the subthreshold leakage current increase at room temperature at Vgs = 0? Assume n = 1.4.
c) By what factor would the subthreshold leakage current increase at 120 °C? Assume the threshold voltage is independent of temperature.
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