Consider an nMOS transistor in a 0.6 μm process with W/L = 4/2 λ (i.e., 1.2/0.6 μm). In this process, the gate oxide thickness is 100 Å and the mobility of electrons is 350 cm2/V • s. The threshold voltage is 0.7 V. Plot Ids vs. Vds for Vgs = 0, 1, 2, 3, 4, and 5 V.
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