Repeat Exercises 1 and 2 when η = 0.04 and VDD = 1.8 V, as in the case of a more realistic...

Repeat Exercises 1 and 2 when η = 0.04 and VDD = 1.8 V, as in the case of a more realistic transistor. γ has a secondary effect, so assume that it is 0. Did the leakage currents go up or down in each case? Is the leakage through the series transistors more than half, exactly half, or less than half of that through the inverter?

Exercise 1

Find the subthreshold leakage current of an inverter at room temperature if the input A = 0. Let βn = 2βp = 1 mA/V2, n = 1.0, and |Vt| = 0.4 V. Assume the body effect and DIBL coefficients are γ = η = 0.

Exercise 2

Repeat Exercise 1 for a NAND gate built from unit transistors with inputs A = B = 0. Show that the subthreshold leakage current through the series transistors is half that of the inverter if n = 1.