Repeat Exercise for a NAND gate built from unit transistors with inputs A = B = 0. Show that the subthreshold leakage current through the series transistors is half that of the inverter if n = 1.
Exercise
Find the subthreshold leakage current of an inverter at room temperature if the input A = 0. Let βn = 2βp = 1 mA/V2, n = 1.0, and |Vt| = 0.4 V. Assume the body effect and DIBL coefficients are γ = η = 0.
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