Calculate the diffusion parasitic Cdb of the drain of a unit-sized contacted nMOS transistor in a 0.6 μm process when the drain is at 0 and at VDD = 5 V. Assume the substrate is grounded. The transistor characteristics are CJ = 0.42 fF/μm2, MJ = 0.44, CJSW = 0.33 fF/μm, MJSW = 0.12, and ψ0 = 0.98 V at room temperature.
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