(a) Determine Vbi for a silicon pn junction at T= 300 K for Na =1015 cm-3 and ND =5 x 1016 cm-3, (b) Repeat part (a) for a GaAs pn junction, (c) Repeat part (a) for a Ge pn junction.
We need at least 10 more requests to produce the solution.
0 / 10 have requested this problem solution
The more requests, the faster the answer.