(a) Determine the built-in potential barrier V bi in a silicon pn junction for (i) Nd = Na =5 × 1015 cm−3;(ii) Nd = 5 × 1017 cm−3 and Na = 10l5cm−3; (iii)Na = Nd = 1018 cm 3. (b) Repeat part (a) for GaAs.
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