Consider n-type GaAs at T = 300 K doped to a concentration of Nd = 2 × 1016 cm-3. Assume mobility values of µn = 6800 cm2/V-s and µp = 300 cm2/V-s. (a) Determine the resistivity of the material. (b) Determine the applied electric field that will induce a drift current density of 175 A/cm2.
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