Problem

A silicon pn junction at T = 300 K is doped at Nd = 1016cm-3 and Na = 1017 cm-3. The junct...

A silicon pn junction at T = 300 K is doped at Nd = 1016cm-3 and Na = 1017 cm-3. The junction capacitance is to be Cj = 0.8 pF when a reverse- bias voltage of VR = 5 V is applied. Find the zero-biased junction capacitance Cj0.

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