The electron and hole diffusion coefficients in silicon are Dn =35 cm2/s and Dp= 12.5 cm2/s, respectively. Calculate the electron and hole diffusion current densities (a) if an electron concentration varies linearly from n= 1015 cm-3 to n =1016 cm-3 over the distance from x= 0 to x= 2.5 µ m and (b) if a hole concentration varies linearly from p=1014 cm-3 to p= 5 x 1015 cm-3 over the distance from x= 0 to x =4.0 µ m.
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