9.4 Bootstrapping circuits are used to increase the gate voltages of transistors such that the drain node voltage can be pulled high (despite the threshold voltage drop). The circuit shown in Fig. P9.4 can be used for such purposes and can indeed increase the node voltage at X well beyond VDD =5 V. Determine the maximum achievable voltage at node X using the following parameters:
• VT0=1.0V
• γ = 0.3V1/2
•|2ϕF| = 0.6V
• VOL = 0.2V
• COL = 12 fF
• Cboot = 20 fF
Figure P9.4
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