Explain how the base width of a bipolar transistor is determined in the standard bipolar fabrication process.
Explain how the base width of a bipolar transistor is determined in the standard bipolar fabrication...
1. In the semiconductor materials fabrication process, Antimony material is injected into the silicon wafer. Name the type of semiconductor product and explain the mechanism involved with the schematic diagrams. 2. Describe the formation of the depletion region and the potential barrier of the PN junction (a) without bias (b) forward bias and (c) reversed bias. 3.Explain on the cause and origin of the high reverse bias current after breakdown of a PN junction. 4.In bipolar Junction transistor, (a) Why...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping of 10^17/cm3, a base doping of 8x10^15/cm3 and a collector doping of 2x10^15/cm3. Carefully calculate how the band diagram, charge density, electric field and electrostatic potential as a function of distance for this device changes from the equilibrium case when this bipolar transistor is properly biased to work as an amplifier. In other words, show how the band diagram changes when the emitter-base junction...
Sketch top view and cross-section of integrated circuit (IC) typical bipolar transistor. Point out all areas (name of contacts and types of impurities) of the transistor. Discuss briefly sequence of fabrication.
A. As an electronic device, what is the function or purpose of a bipolar junction transistor when it is utilized in an analog circuit? B. Make a sketch of a typical volume element of a silicon pnp transistor connected in active larger than the base current. In your sketch, show the path of carriers (both holes and electrons) as they proceed from the emitter to the collector. Identify the paths of all 3 types of base current and explain what...
2. A silicon n'-p-n bipolar transistor has abrupt dopings of 1019, 3x1016, and 5x105 cm in the emitter, base, and collector, respectively. Find the upper limit of the base-collector voltage at which the emitter bias can no longer control the collector current (due to punch- through or avalanche breakdown). Assume the base width (between metallurgical junc- tions) is 0.5 um.
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
2. Design the doping levels and dimensions of a silicon npn bipolar transistor such that the dc current gain is 320 and the Gummel Number is 10' cm². Assume that tm = 10-'s in the base, T, = 10-8 s in the emitter and T, = 10-s in the collector. Answer: xp = 500 nm, NB = 2x10 cm-> and xp = 1 um, Nae = 5.5x10 cm -3