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4. (20 pts) Assume that ? is very small. we want îD-0.1mA and VD-+0.3 V. Assume...
6.(14) For the nMOSFET circuit below, you want to operate the nMOSFET in saturation region with...
6.(14) For the nMOSFET circuit below, you want to operate the nMOSFET in saturation region with ld-0.1 ma and Vd-0.3 volts. (a) What value of Rd and Rs will accomplish that? (b) Validate your computations that the nMOSFET is in saturation mode. Given Vt (threshold voltage) = 0.5 volt, unCox-400uamp/V squared, L= 0.4 um, w=5um. N DS
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
If you have already answered this please allow someone else solve this... V DD Problem #4:...
If you have already answered this please allow someone else
solve this...
V DD Problem #4: Design an amplifier based on the circuit to the left. Design for a gain of 10V/V, an input resistance of at least 1M92, and a bias current of 0.1mA. Choose the maximum Rs value that allows the maximum input signal to be amplified and remain linear and in saturation (i.e. use the definition of linear amplification for a FET and saturation). Assume VTN =...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the largest value that RD can have while maintaining saturation-region operation? VDD-+5 V o-0.5mA RG2 RG2 RD Figure 4
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 k...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
Under exponential smoothing, if we want forecasts to be very responsive to recent demand, the value...
Under exponential smoothing, if we want forecasts to be very responsive to recent demand, the value of alpha should be: Small Very small Large Very large Zero
PROBLEM 4 (20 pts) IMPORTANT: Assume all transistors are in saturation. a) Find the small-signal DC...
PROBLEM 4 (20 pts) IMPORTANT: Assume all transistors are in saturation. a) Find the small-signal DC gain of the amplifier circuit when the small-signal voltage ViN is applied to the gate of M1. Ignore the body effect for M1 and M2. b) Find the small-signal DC gain of the amplifier circuit when the small-signal voltage Vin is applied to the body of M1. In this case, a DC bias voltage (VB) is applied to the gate of M1. Ignore the...
please help with 1&2 Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1...
please help with 1&2
Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1 V.=y=0. Determine the following: (5 pt) 1) Vos and VDS (5 pt) 2) The small-signal parameters, go andro (7.5 pt) 3) Draw small-signal equivalent circuit (7.5 pt) 4) Input Resistance, Rin (7.5 pt) 5) Output Resistance, Rout (15 pt) 6) Small-signal Voltage Gain; A, = Yout +15 V -15 V ima 0 1 ko 50 kn Rout (50 pt) Problem 2. Common-Source Amplifier: Assume...
1. (10 pts) Find the voltage gain for the circuit shown below, assume β-200. Vbe-0.6 and...
1. (10 pts) Find the voltage gain for the circuit shown below, assume β-200. Vbe-0.6 and Vin(t)-1.2+0.2sin(2*pi*1k't) Rc 2k Rb V1 MW V2 40k 10 SINE(1.2.21k 0 0010) tran .01 2. Answer the following questions based on the circuit above. a. Is it possible to drive the amplifer in saturation by changing the values of B, Rb, and Rc, explain your answers. b. What ranges of Rc can be used on this amplifier without going on saturation mode? c. Can...
Please solve this question as soon as possible. less than 20 min Question 4 2 pts...
Please solve this question as soon as possible. less than
20 min
Question 4 2 pts Consider the dc transfer characteristics shown in Figure. Determine the value of the differential-mode input voltage that results in ici = 0.9 10. rd 1.0 s 0.5 ar -0.10 -0.06 -0.02 0.02 0.06 10.10 ) -0.057 V -0.52 V 0-1V - 1.5 V Question 5 2 pts MacBook Pro
6.(14) For the nMOSFET circuit below, you want to operate the nMOSFET in saturation region with ld-0.1 ma and Vd-0.3 volts. (a) What value of Rd and Rs will accomplish that? (b) Validate your computations that the nMOSFET is in saturation mode. Given Vt (threshold voltage) = 0.5 volt, unCox-400uamp/V squared, L= 0.4 um, w=5um. N DS
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
If you have already answered this please allow someone else
solve this...
V DD Problem #4: Design an amplifier based on the circuit to the left. Design for a gain of 10V/V, an input resistance of at least 1M92, and a bias current of 0.1mA. Choose the maximum Rs value that allows the maximum input signal to be amplified and remain linear and in saturation (i.e. use the definition of linear amplification for a FET and saturation). Assume VTN =...
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the largest value that RD can have while maintaining saturation-region operation? VDD-+5 V o-0.5mA RG2 RG2 RD Figure 4
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
PROBLEM 4 (20 pts) IMPORTANT: Assume all transistors are in saturation. a) Find the small-signal DC gain of the amplifier circuit when the small-signal voltage ViN is applied to the gate of M1. Ignore the body effect for M1 and M2. b) Find the small-signal DC gain of the amplifier circuit when the small-signal voltage Vin is applied to the body of M1. In this case, a DC bias voltage (VB) is applied to the gate of M1. Ignore the...
please help with 1&2
Problem i. Common-Gate Amplifier: Assume kp = 2 mA/V, VTp = -1 V.=y=0. Determine the following: (5 pt) 1) Vos and VDS (5 pt) 2) The small-signal parameters, go andro (7.5 pt) 3) Draw small-signal equivalent circuit (7.5 pt) 4) Input Resistance, Rin (7.5 pt) 5) Output Resistance, Rout (15 pt) 6) Small-signal Voltage Gain; A, = Yout +15 V -15 V ima 0 1 ko 50 kn Rout (50 pt) Problem 2. Common-Source Amplifier: Assume...
1. (10 pts) Find the voltage gain for the circuit shown below, assume β-200. Vbe-0.6 and Vin(t)-1.2+0.2sin(2*pi*1k't) Rc 2k Rb V1 MW V2 40k 10 SINE(1.2.21k 0 0010) tran .01 2. Answer the following questions based on the circuit above. a. Is it possible to drive the amplifer in saturation by changing the values of B, Rb, and Rc, explain your answers. b. What ranges of Rc can be used on this amplifier without going on saturation mode? c. Can...
Please solve this question as soon as possible. less than
20 min
Question 4 2 pts Consider the dc transfer characteristics shown in Figure. Determine the value of the differential-mode input voltage that results in ici = 0.9 10. rd 1.0 s 0.5 ar -0.10 -0.06 -0.02 0.02 0.06 10.10 ) -0.057 V -0.52 V 0-1V - 1.5 V Question 5 2 pts MacBook Pro
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